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Epitaxy, epitaxial

Molecular beam epitaxy. Epitaxial techniques are techniques of arranging atoms in single-crystal fashion on crystalline substrates so that the lattice of the newly grown film duplicates that of the substrate. If the film is of the same material as the substrate, the process is called homoepitaxy, epitaxy, or simply epi. The most important applications here are Si epi on Si substrates and GaAs epi on GaAs substrates. If the deposit is made on a substrate that is chemically different, the process is termed heteroepitaxy. An important application is the deposition of silicon on an insulator (SOI) e.g. with sapphire (AI2O3) as the insulator in the silicon on sapphire (SOS) process. [Pg.79]

Another concept in synthesis is epitaxy. Epitaxy is the continuation of the crystal orientation of the monocrystalline substrate in the deposited crystalline product, which may be the same compound as the substrate or a different solid that has the same crystal orientation as the monocrystalline solid. Epitaxial layers are essential for microlithography in the electronic industry carefully formed epitaxial layers do not have localized electronic interface states, which are deleterious for the functioning of the device. The process conditions for epitaxy by molecular beam epitaxy (MBE) are very low process pressure, comparatively high temperatures, and a low growth rate. MBE is a form of CVD, which was described in Chapter 6. Liquid phase epitaxy (LPE) is a form of growth of single crystals from a melt. [Pg.277]

The oriented overgrowth of a crystalline phase on the surface of a substrate that is also crystalline is called epitaxial growth [104]. Usually it is required that the lattices of the two crystalline phases match, and it can be a rather complicated process [105]. Some new applications enlist amorphous substrates or grow new phases on a surface with a rather poor lattice match. [Pg.341]

A. Schmidt, L. K. Chau, A. Back, and N. R. Armstrong, Epitaxial Phthalocyanine Ultrathin Films Grown by Organic Molecular Beam Epitaxy (OMBE), in Phthalo-cyanines, Vol. 4, C. Leznof and A. P. B. Lever, eds., VCH Publications, 1996. [Pg.346]

It has also been shown that sufiBcient surface self-diflfiision can occur so that entire step edges move in a concerted maimer. Although it does not achieve atomic resolution, the low-energy electron microscopy (LEEM) technique allows for the observation of the movement of step edges in real time [H]. LEEM has also been usefiil for studies of epitaxial growth and surface modifications due to chemical reactions. [Pg.293]

Herman M A and Sitter H 1996 Moiecuiar Beam Epitaxy Fundamentais and Current Status (Berlin Springer)... [Pg.318]

Another example of epitaxy is tin growdi on the (100) surfaces of InSb or CdTe a = 6.49 A) [14]. At room temperature, elemental tin is metallic and adopts a bet crystal structure ( white tin ) with a lattice constant of 5.83 A. However, upon deposition on either of the two above-mentioned surfaces, tin is transfonned into the diamond structure ( grey tin ) with a = 6.49 A and essentially no misfit at the interface. Furtliennore, since grey tin is a semiconductor, then a novel heterojunction material can be fabricated. It is evident that epitaxial growth can be exploited to synthesize materials with novel physical and chemical properties. [Pg.927]

The following two sections will focus on epitaxial growth from a surface science perspective with the aim of revealing the fundamentals of tliin-film growth. As will be discussed below, surface science studies of thin-film deposition have contributed greatly to an atomic-level understanding of nucleation and growth. [Pg.928]

MgO films have been grown on a Mo(lOO) substrate by depositing Mg onto a clean Mo(lOO) sample in O2 ambient at 300 K [39, 40]. LEED results indicated that MgO grows epitaxially at an opthnum O2 pressure of... [Pg.941]

Figure A3.10.13 Ball model illustration of an epitaxial MgO overlayer on Mo(lOO) [38]. Figure A3.10.13 Ball model illustration of an epitaxial MgO overlayer on Mo(lOO) [38].
Foord J S, Davies G J and Tsang W S 1997 Chemical Beam Epitaxy and Related Techniques (New York Wiley)... [Pg.954]

Panish M B and Temkin H 1993 Gas Source Molecular Beam Epitaxy (New York Springer)... [Pg.954]

Stringfellow G B 1989 Organometallic Vapor-Phase Epitaxy (San Diego, CA Academic)... [Pg.954]

Brune H 1998 Microscopic view of epitaxial metal growth nucleation and aggregation Surf. Sc . Rep. 31 121... [Pg.954]

Although the structure of the surface that produces the diffraction pattern must be periodic in two dimensions, it need not be the same substance as the bulk material. Thus LEED is a particularly sensitive tool for studying the structures and properties of thin layers adsorbed epitaxially on the surfaces of crystals. [Pg.1368]

Figure Bl.19.27. AFM topographic images (7x7 pm ) of 20 epitaxial Ag films on mica prepared at five substrate temperatures (75, 135, 200, 275, and 350 °C) and four film thicknesses (50, 110, 200, and 300 mn)... Figure Bl.19.27. AFM topographic images (7x7 pm ) of 20 epitaxial Ag films on mica prepared at five substrate temperatures (75, 135, 200, 275, and 350 °C) and four film thicknesses (50, 110, 200, and 300 mn)...
Aspens D E and Dietz N 1998 Optical approaches for controlling epitaxial growth Appl. Surf. Sc/. 130-132 367-76... [Pg.1799]

Figure Bl.24.11. The backscattering yield from an Si sample tiiat has been implanted with Si atoms to fonn an amorphous layer. Upon annealing this amorphous layer reerystallizes epitaxially leading to a shift in the amorphous/single-erystal interfaee towards the surfaee. The aligned speetra have a step between the amorphous and erystal substrate whieh shifts towards the surfaee as the amorphous layer epitaxially reerystallizes on the Si. Figure Bl.24.11. The backscattering yield from an Si sample tiiat has been implanted with Si atoms to fonn an amorphous layer. Upon annealing this amorphous layer reerystallizes epitaxially leading to a shift in the amorphous/single-erystal interfaee towards the surfaee. The aligned speetra have a step between the amorphous and erystal substrate whieh shifts towards the surfaee as the amorphous layer epitaxially reerystallizes on the Si.
Chaimelling only requires a goniometer to inelude the effeet in the battery of MeV ion beam analysis teelmiques. It is not as eonnnonly used as tire eonventional baekseattering measurements beeause the lattiee loeation of implanted atoms and the aimealing eharaeteristies of ion implanted materials is now reasonably well established [18]. Chaimelling is used to analyse epitaxial layers, but even then transmission eleetron mieroseopy is used to eharaeterize the defeets. [Pg.1840]

Csepregi L, Kennedy E F, Gallagher T J, Mayer J W and Sigmon T W 1978 Substrate orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si J. Appi. Phys. 49 3906... [Pg.1849]

The growth of a well ordered fullerene monolayer, by means of molecular beam epitaxy, has been used for the controlled nucleation of single crystalline thin films. The quality and stability of molecular thin films has been shown... [Pg.2413]

Sakurai M, Tada FI, Saiki K, Koma A, Funasaka FI and Kishimoto Y 1993 Epitaxial growth of Cgg and Cyq films... [Pg.2427]

Koma A 1992 Van Der Waals epitaxy—a new epitaxial growth method for a highly lattice mismatched system Thin Soiid Fiims 216 72-6... [Pg.2427]

Dura J A, Pippenger P M, Flalas N J, Xiong X Z, Chow P C and Moss S C 1993 Epitaxial integration of single crystal Cgq Appi. Rhys. Lett. 63 3443-5... [Pg.2427]

Fischer J E, Werwa E and Fleiney P A 1993 Pseudo epitaxial Cgq films prepared by a hot wall method Appi. Rhys. A 56 193-6... [Pg.2427]

III-V compound semiconductors with precisely controlled compositions and gaps can be prepared from several material systems. Representative III-V compounds are shown in tire gap-lattice constant plots of figure C2.16.3. The points representing binary semiconductors such as GaAs or InP are joined by lines indicating ternary and quaternary alloys. The special nature of tire binary compounds arises from tlieir availability as tire substrate material needed for epitaxial growtli of device stmctures. [Pg.2879]


See other pages where Epitaxy, epitaxial is mentioned: [Pg.446]    [Pg.1611]    [Pg.24]    [Pg.59]    [Pg.487]    [Pg.294]    [Pg.295]    [Pg.341]    [Pg.341]    [Pg.342]    [Pg.543]    [Pg.301]    [Pg.301]    [Pg.304]    [Pg.926]    [Pg.926]    [Pg.927]    [Pg.928]    [Pg.928]    [Pg.929]    [Pg.929]    [Pg.1302]    [Pg.1702]    [Pg.1726]    [Pg.1757]    [Pg.1839]    [Pg.2413]    [Pg.2414]    [Pg.2729]    [Pg.2880]   
See also in sourсe #XX -- [ Pg.74 ]




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Acetylene epitaxial

Adsorption epitaxial

Alumina films, epitaxial

Analysis of Epitaxial Layers

Anisotropic epitaxial growth

Application molecular beam epitaxy

Atomic Layer Epitaxy (ALE)

Atomic Layer Epitaxy and UPD Revisited

Atomic beam epitaxy

Atomic layer epitaxy

Bands chain epitaxy

Bands epitaxy

Chemical molecular beam epitaxy

Chemical vapor deposition, modeling epitaxial growth

Coating epitaxial coatings

Conformational and Packing Energy Analysis of Polymer Epitaxy

Cooling Epitaxy

Cooling epitaxial

Critical thickness of a strained epitaxial film

Crystal growth epitaxial

Crystalline , epitaxial

Crystalline , epitaxial polymerization

Crystallization epitaxial growth

Diacetylenes epitaxial polymerization

Directional epitaxial solidification

Doping and Electrical Properties of Epitaxial Layers

Doping of Epitaxial Films

ECALE technique atomic layer epitaxy

Elastic strain in layered epitaxial materials

Electrochemical atomic layer epitaxy

Electrochemical atomic layer epitaxy ECALE)

Electrochemical atomic layer epitaxy studies

Electrochemical atomic layer epitaxy thin film formation using

Electronic structure of epitaxial monolayers

Epitaxial

Epitaxial

Epitaxial CVD

Epitaxial Crystallization of Polymers

Epitaxial Crystallization of Polymers Means and Issues

Epitaxial Films and Superstructures

Epitaxial Growth Equipments

Epitaxial Growth and Surface Nucleation

Epitaxial Growth of Implanted Amorphous Si

Epitaxial MBE

Epitaxial PLD

Epitaxial Y

Epitaxial ZnO thin films

Epitaxial alignment

Epitaxial atomic processes

Epitaxial attachment

Epitaxial ceria films

Epitaxial chemical compatibility

Epitaxial coherency

Epitaxial connection

Epitaxial considerations

Epitaxial crystallinity

Epitaxial crystallisation

Epitaxial crystallization

Epitaxial crystallization INDEX

Epitaxial crystallization analysis

Epitaxial crystallization characteristics

Epitaxial crystallization crystals

Epitaxial crystallization investigation

Epitaxial crystallization lattice matching

Epitaxial crystallization materials

Epitaxial crystallization of isotactic and syndiotactic polypropylene

Epitaxial crystallization of linear polymers

Epitaxial crystallization, method

Epitaxial deposition

Epitaxial deposition atomic layer

Epitaxial deposition hydride vapor-phase epitaxy

Epitaxial deposition molecular beam epitaxy

Epitaxial deposition techniques

Epitaxial effect

Epitaxial emitter BJT

Epitaxial emitter structure

Epitaxial enhancement

Epitaxial films

Epitaxial films growth

Epitaxial films heteroepitaxy

Epitaxial films homoepitaxy

Epitaxial films, crystal symmetry

Epitaxial films, lattice mismatch

Epitaxial films, structure

Epitaxial germanium

Epitaxial graphene

Epitaxial graphene sensors

Epitaxial growth

Epitaxial growth amorphous

Epitaxial growth liquid phase epitaxy

Epitaxial growth manipulation

Epitaxial growth modes

Epitaxial growth molecular beam epitaxy

Epitaxial growth molecular phase epitaxy

Epitaxial growth morphologies

Epitaxial growth of crystals

Epitaxial growth oscillations

Epitaxial growth solid phase epitaxy

Epitaxial growth techniques

Epitaxial growth velocity

Epitaxial growth, of thin films

Epitaxial heterogeneous nucleation

Epitaxial homogeneous nucleation

Epitaxial hypothesis

Epitaxial island shapes

Epitaxial lateral overgrowth

Epitaxial lattice match

Epitaxial layer transfer

Epitaxial layers

Epitaxial layers composition

Epitaxial layers critical thickness

Epitaxial layers interface roughness

Epitaxial layers misfit dislocations

Epitaxial layers mismatch

Epitaxial layers relaxation

Epitaxial layers superlattice

Epitaxial layers thickness

Epitaxial layers threading dislocations

Epitaxial layers, electronic

Epitaxial match

Epitaxial matching

Epitaxial mechanism

Epitaxial methods for the preparation of NSSE

Epitaxial misfit

Epitaxial monolayer

Epitaxial nucleation

Epitaxial organic film growth

Epitaxial polymerization

Epitaxial polymerization poly

Epitaxial polysilicon

Epitaxial processes

Epitaxial relationship

Epitaxial relationships sapphire

Epitaxial second order

Epitaxial silicon

Epitaxial silicon films

Epitaxial silicon reactors

Epitaxial silicon thin films

Epitaxial silicon wafers

Epitaxial silicon, plasma enhanced

Epitaxial strains

Epitaxial structures

Epitaxial switchable mirrors

Epitaxial synthesis

Epitaxial synthesis deposition

Epitaxial synthesis vapor deposition

Epitaxial technological applications

Epitaxial thickness

Epitaxial thin film model catalysts

Epitaxial thin films

Epitaxial thin films, stress

Epitaxial transition

Epitaxial twins

Epitaxial, surface nitride

Epitaxial-type shell

Epitaxially Self-Assembled Quantum Dots

Epitaxially textured films

Epitaxis

Epitaxis

Epitaxis and Pseudomorphism

Epitaxy

Epitaxy (heterogeneous

Epitaxy Engineering Crystals

Epitaxy Involving Fold Surfaces of Polymer Crystals

Epitaxy as a Means to Generate Oriented Opto- or Electroactive Materials

Epitaxy buffer layer

Epitaxy chemical beam

Epitaxy coherency strain

Epitaxy cold-wall

Epitaxy compounds

Epitaxy definition

Epitaxy deposition process

Epitaxy discussion

Epitaxy epitaxial growth

Epitaxy epitaxial phase diagram

Epitaxy gallium nitride

Epitaxy garnets, liquid phase

Epitaxy goals

Epitaxy growth

Epitaxy heteroepitaxy

Epitaxy homoepitaxy

Epitaxy magnetism

Epitaxy matching

Epitaxy metal substrate

Epitaxy methods

Epitaxy mica substrate

Epitaxy molecular beam , preparation

Epitaxy of Helical Polymers

Epitaxy perfect

Epitaxy phase

Epitaxy processes

Epitaxy pseudomorphic growth

Epitaxy relations

Epitaxy solid-phase

Epitaxy solid-state

Epitaxy tilted

Epitaxy vapor-phase

Epitaxy, LEED observations

Epitaxy, Ultrathin Films

Epitaxy, ledge-directed

Epitaxy, vapor phase nitride thin films

Epitaxy-based device

Example Stability of a strained epitaxial film

Film epitaxial crystal limit

Film forming processing epitaxy

Film/coating formation epitaxial

Films, epitaxial inorganic

Formation and Superstructural Development of Epitaxially Grown FePt Nanoparticles

GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC

Gallium arsenide molecular beam epitaxy

Gas phase molecular beam epitaxy

Germanium epitaxial film

Growth of GaN on Porous SiC by Molecular Beam Epitaxy

Hard epitaxy

Helical polymers epitaxy

Heterogeneous nucleation epitaxy)

Hydride vapor phase epitaxy (HVPE

Hydride vapor-phase epitaxy

INDEX epitaxial

Inorganic atomic layer epitaxy

Iron oxide films, epitaxial

Isotactic polypropylene epitaxial crystallization

Kebab epitaxial growth

Lateral Epitaxy and Microstructure in Selectively Grown GaN on SiC Substrates

Lateral epitaxial growth

Lateral epitaxial overgrowth (LEO

Lateral epitaxy

Layers epitaxial organic

Layers, epitaxial inorganic

Linear polymers epitaxial crystallization

Liquid Phase Epitaxy (LPE)

Liquid Phase Epitaxy on Foreign Substrates

Liquid epitaxy

Liquid-phase atomic layer epitaxy,

Liquid-phase epitaxy

Liquid-phase epitaxy advantages

Liquid-phase epitaxy growth time

Liquid-phase epitaxy impurity

Liquid-phase epitaxy substrate preparation

Local epitaxy

Low-Temperature Silicon Liquid Phase Epitaxy

MBE—See Molecular beam epitaxy

MOVPE epitaxy

Magnetic Properties of Epitaxially Grown Films

Mechanism liquid-phase epitaxy

Metal films, epitaxial

Metal organic vapor-phase epitaxy (MOVPE

Metal-organic molecular beam epitaxy

Metal-organic vapor-phase epitaxy

Metalorganic vapor phase epitaxy

Migration-enhanced epitaxy

Mineralization epitaxy)

Molecular beam epitaxy

Molecular beam epitaxy , gallium

Molecular beam epitaxy arrangement

Molecular beam epitaxy conditions

Molecular beam epitaxy deposition

Molecular beam epitaxy device applications

Molecular beam epitaxy diffractions

Molecular beam epitaxy reflection high energy electron

Molecular beam epitaxy technique

Molecular beam epitaxy, MBE

Molecular beam epitaxy, growth chamber

Molecular epitaxy

Molecular layer epitaxy

Nickel epitaxial growth

Nitrides epitaxy

Non-epitaxial growth

Nucleating agents epitaxy

OMVPE epitaxy

Optical Polarization and Crystal Epitaxy Effects

Organic molecular beam epitaxy

Organic molecular beam epitaxy (OMBE

Organic-inorganic molecular beam epitaxy

Organometallic Vapor Phase Epitaxy (OMVPE) System Technology

Organometallic chemical vapor phase epitaxy

Organometallic vapor phase epitaxy OMVPE)

Organometallic vapor-phase epitaxy

Organometallic vapor-phase epitaxy growth precursors

Oriented and Epitaxial Growth

Passive film crystallinity, epitaxy

Pendeo epitaxy

Pendeo-epitaxial Layers

Phase Epitaxy (LPE)

Plasma source molecular beam epitaxy

Poly butene epitaxial crystallization

Poly isotactic, epitaxial crystallization

Polyamides epitaxial crystallization

Polymer crystal fold surfaces, epitaxial crystallization

Polymers epitaxial crystallization

Polyolefins epitaxial crystallization

Polypropylene epitaxial crystallization

Quantum epitaxial growth

Reactive deposition epitaxy

Reflection high energy electron diffraction, molecular beam epitaxy

Role of Epitaxy in Heterogeneous Nucleation

Sapphire Substrates for ZnO Epitaxy

Selective Area Growth and Epitaxial Lateral Overgrowth of GaN

Selective area epitaxy

Selective epitaxy

Semiconductors molecular beam epitaxy

Semiconductors, organometallic vapor phase epitaxy

Silicon carbide epitaxial growth

Silicon epitaxy

Single crystal and epitaxial film electrodes

Single molecular beam epitaxy

Single-Step Epitaxy on Semiconductor Substrates

Site competition epitaxy

Soft epitaxy

Solid state epitaxial

Step-controlled epitaxy

Strained epitaxial islands

Studying epitaxial films

Studying the crystallographic orientation and determining epitaxy relations

Substrates for epitaxial growth

Superlattice epitaxial

Surface processes in GaAs epitaxial growth

Surfaces molecular beam epitaxy

Switchable epitaxial

Texture-oriented films epitaxial growth

The phenomenon of epitaxy

Thin epitaxial

Thin epitaxial layers

Thin film molecular beam epitaxy

Thin film technology molecular beam epitaxy

Three-dimensional epitaxial crystallites

Transmission electron microscopy epitaxial growth

Two-step epitaxy

Vacuum Evaporation-Epitaxy

Van der Waals epitaxy

Vapor Phase Epitaxy (VPE)

Vapor phase epitaxy device results

Vapor phase epitaxy growth

Vapor phase epitaxy reactor

Vapor phase epitaxy various substrates

Vapor-phase molecular layer epitaxy

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