Metal-organic molecular beam epitaxy

MOMBE metal-organic molecular beam epitaxy... 

MBE MEIS MESFET MINDO MIS MOCVD MOMBE MOS MOSFET MOVPE molecular beam epitaxy medium energy ion scattering metal semiconductor field effect transistor modified intermediate neglect of differential overlap metal-insulator-semiconductor metal-organic chemical vapour deposition metal-organic molecular beam epitaxy metal-oxide-semiconductor metal-oxide-semiconductor field effect transistor metal-organic vapour phase epitaxy... 

For some elements, there are a variety of possible precursors, sulfur for instance (Fig. 8). Metal-organic precursors, such as used in metaUo organic molecular beam epitaxy (MOMBE) or metallo organic vapor phase epitaxy (MOVPE), are possible precursors that can be used, if they can be made soluble in water or if a nonaqueous solvent were used. Mixed aqueous-organic solvents could improve solubility. Overah, there would be an increased probabihty of carbon contamination. One of the benefits... 

The mechanical properties of materials involve various concepts such as hardness, shear and bulk modulus. The group III nitrides are now mostly used as fihns or layers grown by metal organic vapour phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) on sapphire, GaAs or SiC. The lattice parameters of the substrate do not generally match those of the deposited layer, and therefore, stresses appear at the interface and in the layer and modify its physical properties. Hence, it is necessary to have a good knowledge of these properties. 

The assumption of equilibrium which is implicit in EQN (1) is expected to be satisfied at the high temperatures at which metal-organic chemical vapour deposition (MOCVD) growth of nitrides is carried out. At lower temperatures, such as those used in molecular-beam epitaxy (MBE), deviations from equilibrium may occur. 

Hydrogen plays an important role in III-V semiconductors especially in the nitrides, passivating the electrical activity of shallow and deep level impurities. This is more important in GaN grown by metal-organic vapour phase epitaxy (MOVPE) than by molecular beam epitaxy (MBE). Using SIMS... 

Another emerging film growth technique that employs metal-organic film growth precursors is termed CBE (chemical beam epitaxy). CBE is a variant of the widely used MBE (molecular beam epitaxy) technique, except that metal-organic... 

Recently, low-temperature routes have been sought for by decomposition of organometallic complexes with tellurium-containing ligands. The optoelectronic devices normally require the material to be used as thin films. They are fabricated with special methods, such as molecular beam epitaxy, metal-organic chemical vapour deposition, or atomic layer deposition. 

CVD = chemical vapor deposition DH = double heterostructure H = homojunction device ITO = indium tin oxide LEDs = light emitting diodes LPE = liquid phase epitaxy MBE = molecular beam epitaxy MOCVD = metal organic chemical vapor deposition PPV = p-phenylenevinyl-ene PEDOT = polyethylene dioxythiophene TFEL = Thin film electroluminescent VPE = vapor phase epitaxy. 

There are many potential approaches to fabricate inhomogeneous Fabiy-Perot cavities. We have fabricated various coatings that exhibit the properties described above, by metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and electron beam depositiom... 

Several techniques have been reported and, at the present time, the vapor phase deposition processes operating at temperatures around 300 °C are the most used. Thus II-VI compounds films like CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe have been grown epitaxially on Si, InP, GaAs, GaP, by molecular beam epitaxy (MBE) [204-207], by metal organic chemical vapor deposition (MOCVD) [208-210], or by pulsed laser deposition [211, 212]. Epitaxial deposition from aqueous solutions at low temperatures (< 100 °C) represents another approach. Specific beneficial effects may be also expected due to the simplicity of the process involving low cost investments. On the other hand the low temperature has for consequence the absence of interdiffusion processes around interfaces and the interfacial properties of the solids in contacts with solutions implicate excellent coverage properties at low thicknesses. Different... 

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