Site competition epitaxy

Larkin, D. J., et al., Hydrogen Incorporation in Boron-Doped 6H-SiC CVD Epilayers Produced Using Site-Competition Epitaxy, J. Electron. Mater., Vol. 24, 1995, pp. 289-294. 

DJ Larkin, PG Neudeck, JA Powell, LG Matus. Site-competition epitaxy for controlled doping of CVD silicon carbide. Institute of Physics Conference Series No. 137. London IDP, 1994, p 51. HM Hobgood, RG Glass, G Augustine, RH Hopkins, J Jenny, M Skowronski, WC Mitchel, M Roth. Semi-insulating 6H-SiC grown by physical vapor transport. Appl Phys Lett 66 1364, 1995. GL Pearson, J Bardeen. Electrical properties of pure silicon and sdicon aloys containing boron and phosphorus. Phys Rev 75 865, 1949. 

Once the thermodynamic parameters of stable structures and TSs are determined from quantum-chemical calculations, the next step is to find theoretically the rate constants of all elementary reactions or elementary physical processes (say, diffusion) relevant to a particular overall process (film growth, deposition, etc.). Processes that proceed at a surface active site are most important for modeling various epitaxial processes. Quantum-chemical calculations show that many gas-surface reactions proceed via a surface complex (precursor) between an incident gas-phase molecule and a surface active site. Such precursors mostly have a substantial adsorption energy and play an important role in the processes of dielectric film growth. They give rise to competition among subsequent processes of desorption, stabilization, surface diffusion, and chemical transformations of the surface complex. 

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