Epitaxial growth liquid phase epitaxy

Lindroos S, Kanniainen T, Leskela M (1994) Growth of ZnS thin films by liquid-phase atomic layer epitaxy (LPALE). Appl Surf Sci 75 70-74... 

Figure 4.9. Scanning electron microscope photographs showing the roughening transition of 111) faces of a TiOj crystal and the formation of hollowed needle crystals as impurities are added [19]. Growth occurs by liquid phase epitaxy on a (001) substrate. Fe203 is added as an impurity in the following amounts (a) 0%. (b) 1.3 mol%,...

Figure 19.1 Device for liquid phase epitaxial growth of several layers.

Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA).

Liquid-phase epitaxy is the process of growing films from a liquid solution and is an attractive method of film growth for several reasons. LPE was the... 

Solid-Phase Chemical Equilibrium. For the growth of multicomponent films, the solid film composition must be predicted from the gas-phase composition. In general, this prediction requires detailed information about transport rates and surface incorporation rates of individual species, but the necessary kinetics data are rarely available. On the other hand, the equilibrium analysis only requires thermodynamic data (e.g., phase equilibrium data), which often are available from liquid-phase-epitaxy studies, as discussed by Anderson in Chapter 3. 

Epitaxial Layers. Epitaxial deposition produces a single crystal layer on a substrate for device fabrication or a layer for multilevel conductive interconnects which may be of much higher quality than the substrate. The epitaxial layer may have a different dopant concentration as a result of introducing the dopant during the epitaxial growth process or may have a different composition than the substrate as in silicon on sapphire. Methods used for epitaxial growth include chemical vapor deposition (CVD), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). 

The invention of US-A-3902924 is concerned with low temperature growth of mercury cadmium telluride layers on insulating substrates by liquid phase epitaxy. Infrared detectors are fabricated to assist with the evaluation of the grown layers. 

Methods of manufacturing mercury cadmium telluride material have evolved from bulk melt growth to liquid phase epitaxy (LPE) technology, vapor phase epitaxy (VPE) and metal-organic chemical vapor deposition (MOCVD) [5-7], These new methods have made it possible to manufacture large two-dimensional focal plane arrays [8-11],... 

M. H. Randles Liquid Phase Epitaxial Growth ofMagnetic Garnet (103 ref.)... 

K. Nakajima, The Liquid-Phase Epitaxial Growth of InGaAsP... 

Crystal Growth from Melts and Solutions 17.2.4.2. Growth from High-Melting Solutions 17.2.4.2.7. Liquid Phase Epitaxy (LPE). 

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