Molecular beam epitaxy , gallium

S. Muthuvenkatranian, S. Gorantla, R. Venkat, D. L. Dorsey. Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide. J App Phys S5 5845, 1998. 

Gallium arsenide for solid-state lasers and fast memory chips can be formed by molecular beam epitaxy through the reaction... 

Figure 3.26 Molecular beam epitaxy (a) simplified presentation of monatomic layers of gallium and nitrogen deposited sequentially to form a gallium nitride film (b) molecular beam epitaxy system designed and built at Pacific Northwest National Laboratory, Richland, WA. (Reproduced with permission.)...

The structures with self-organized GaN/AlN QDs were grown by molecular beam epitaxy (MBE) on (0001) sapphire substrates. Ammonia was used as the source of active nitrogen. A single layer of GaN QDs was formed on the AIN buffer surface by a particular MBE growth mode at relatively low substrate temperatures (Ts 540°C). A beam equivalent pressure (BEP) of gallium flux was 5.4T0 Torr and BEP of ammonia flux was 10" Torr. To obtain GaN QDs... 

Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkoc, H., Hafich, M., Wang, P. D., and Robinson, G. Y. Optical properties of gallium arsenide on (lOO)-silicon using molecular beam epitaxy. Appl. Phys. Lett. 45, 1309-1311 (1984). 

Gallium self-diffusion in was measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy was used to monitor the intermixing of Ga and iGa between isotopically pure GaP epilayers which were grown by molecular beam epitaxy onto GaP substrates. The Ga self-diffusion in undoped GaP was described by ... 

Molecular Beam Epitaxy (MBE) Gallium Arsenide Ga/AsHj... 

In addition to the reactant gases listed in Table 5, hydride dopants (e g., arsine, phosphine, diborane) may be introduced to control the type of conductivity and resistivity of the film layer. For silicon films, the dopant gases are introduced in small amoimts (e.g., ppb levels) while for III-V films, the concentrations used are considerably higher (e.g., percentage concentrations). For molecular beam epitaxy (MBE), solid gallium is used for P-type doping and antimony for N-type doping. 

High exposures to arsine can also occur during the maintenance of solid source molecular beam epitaxy (MBE) systems for gallium arsenide. Room air concentrations of 0.08 ppm were detected in one study when the chamber of the MBE unit was opened for maintenance. The authors hypothesized that transient arsine generation may be caused by a reaction of very fine particulate arsenic with water vapor with aluminum acting as a catalyst. ]... 

The simplest way to prepare a plasmonic nanostructure is thermal and electron beam deposition in vacuum on a flat substrate that is either hydrophilic or hydrophobic. Even though the roughness of the structure depends on the contact angle between the metal and substrate, which is less controllable, the method can be well applied to some metals. DUV plasmonic nanostructures were readily formed by thermal deposition of indium onto a glass substrate. The size of indium nanostructures can be controlled from 15 to 50 nm by the evaporation speed, pressure, and the deposited thickness. The resulting extinction peaks due to the dipole resonance were tuned to between 260 and 600 nm, which were used for surface enhancement of Raman spectroscopy by DUV excitation [7]. Self-assembled arrays of hemispherical gallium nanoparticles were deposited by molecular beam epitaxy on a sapphire support as a substrate for UV plasmonics. The mean NanoParticle radii of 23, 26, and 70 nm were fabricated at LSPR frequencies... 

M Rubin, N Newman, JS Chan, TC Fu, JT Ross.p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion or coevaporation of Mg. Appl Phys Lett 64 64, 1994. 

Nakahara, K., Takasu, H., Fons, P., Yamada, A., Iwata, K, Matsubara, K., Hunger, R. and Niki, S. (2001) Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy. Applied Physics Letters, 79, 4139. 

---