Electrochemical atomic layer epitaxy thin film formation using

Mathe MK, Cox SM, Venkatasamy V, Uwe Happek, Stickney JL (2005) Formation of HgSe thin films using electrochemical atomic layer epitaxy. J Electrochem Soc 152 C751-C755... 

Vaidyanathan R, Stickney JL, Cox SM, Compton SP, Happek U (2003) Formation of InaSes thin films and nanostructures using electrochemical atomic layer epitaxy. J Electroanal Chem 559 55-61... 

The use of electrochemical atomic layer epitaxy for the electrosynthesis of high quality thin films of thermoelectric materials is studied. Specifically, the use of sequential underpotential deposition (upd) cycles of Sb and Co for the production of CoSb phases on Au substrates is investigated. Stable atomic layers of Sb can be formed on Au, and were imaged for the first time by STM. These layers consist of randomly distributed islands of Sb with a mean diameter of 5.5 nm and a mean height of 0.35 nm. Co upd layers appear to form in situ on Au, but do not survive transfer to the Sb deposition solution. In contrast, stable upd layers of Co can be produced on the Sb/Au surface. In addition, there is a 180 mV positive shift of the Co upd formal potential to more positive values, suggestive of the formation of a stable CoSb phase. 

Huang B et al (1995) Preliminary studies of the use of an automated flow-cell electrodeposition system for the formation of CdTe thin films by electrochemical atomic layer epitaxy. J Electrochem Soc 142 3007-3016... 

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