Epitaxial transition

Crystallization in asymmetric diblocks with compositions = 0.35 and 0.46 was also investigated by Hamley et al. (19966). It was found that a lamellar structure melted epitaxially (i.e. the domain spacing and orientation were maintained across the transition) to a hexagonal-packed cylinder structure in the /PE = 0.35 sample. This is illustrated in Fig. 5.15, which shows SAXS patterns in the solid and melt states, with a schematic of the epitaxial melting process (Hamley et al. 1996a.b). The same epitaxial transition has been observed for a polyethylene oxide)-poly(buty)ene oxide) diblock (Ryan et at. 1997) vide infra). 

Guo D, Sakamoto K, Miki K, Ikada S, Saiki K. Alignment-induced epitaxial transition in organic-organic heteroepitaxy. Phys Rev Lett 2008 101 236103—236106. 

Figure 4.3 Schematic illustration of the epitaxial transition from hex to DG and the reverse transition. These are along a low-energy pathway connecting the local minima of the hex and DG phases, revealed by studying the topography of the Landau free-energy surface. (Reproduced from M. W. Matsen (1998) Phys. Rev. Lett. 80 4470-4473, Copyright (1998) with permission from the American Physical Society.)...

Extended defects range from well characterized dislocations to grain boundaries, interfaces, stacking faults, etch pits, D-defects, misfit dislocations (common in epitaxial growth), blisters induced by H or He implantation etc. Microscopic studies of such defects are very difficult, and crystal growers use years of experience and trial-and-error teclmiques to avoid or control them. Some extended defects can change in unpredictable ways upon heat treatments. Others become gettering centres for transition metals, a phenomenon which can be desirable or not, but is always difficult to control. Extended defects are sometimes cleverly used. For example, the smart-cut process relies on the controlled implantation of H followed by heat treatments to create blisters. This allows a thin layer of clean material to be lifted from a bulk wafer [261. 

Tertiary arsines have been widely employed as ligands in a variety of transition metal complexes (74), and they appear to be useful in synthetic organic chemistry, eg, for the olefination of aldehydes (75). They have also been used for the formation of semiconductors (qv) by vapor-phase epitaxy (76), as catalysts or cocatalysts for a number of polymeri2ation reactions (77), and for many other industrial purposes. 

Cathodoluminescence microscopy and spectroscopy techniques are powerful tools for analyzing the spatial uniformity of stresses in mismatched heterostructures, such as GaAs/Si and GaAs/InP. The stresses in such systems are due to the difference in thermal expansion coefficients between the epitaxial layer and the substrate. The presence of stress in the epitaxial layer leads to the modification of the band structure, and thus affects its electronic properties it also can cause the migration of dislocations, which may lead to the degradation of optoelectronic devices based on such mismatched heterostructures. This application employs low-temperature (preferably liquid-helium) CL microscopy and spectroscopy in conjunction with the known behavior of the optical transitions in the presence of stress to analyze the spatial uniformity of stress in GaAs epitaxial layers. This analysis can reveal,... 

This reaction is irreversible. Epitaxial silicon is deposited. Polycrystalline silicon is obtained in the range of 610-630°C, which is close to the crystalline-amorphous transition temperature. 

McPhail (1989) gives a detailed account of the experimental approach to depth profiling of semiconductors, including the quantification of the data. He illustrates the analysis of a silicon epilayer grown by molecular beam epitaxy (MBE) in which 11 boron-rich layers were incorporated by co-evaporation of boron. The intended structure is shown in Figure 4.8, and it was desirable to establish the concentration of boron in the layers, the inter-peak concentration and the sharpness of the doping transitions. 

The pathway and kinetics of the C to S transition have been studied on shear-aligned cylinders of the commercial diblock copolymer of PS and poly(ethylene-co-butylene) (KRATON G 1657 Shell Chemical Company) [143, 144], A complete dissolution of the cylindrical structure before the epitaxial... 

The kinetics and mechanisms of the C —> G transition in a concentrated solution of PS-fr-PI in the PS-selective solvent di-n-butyl phthalate was studied [137,149]. An epitaxially transformation of the shear-oriented C phase to G, as previously established in melts [13,50,150], was observed. For shallow quenches into G, the transition proceeds directly by a nucleation and growth process. For deeper quenches, a metastable intermediate structure appears, with scattering and rheological features consistent with the hexag-onally perforated layer (PL) state. The C -> G transition follows the same pathways, and at approximately the same rates, even when the initial C phase is not shear-oriented. 

However, a PS-fo-PI/PI blend shows direct L G transitions without appearance of the PL phase. The L microdomain is more favourable than the PL phase since the volume fraction of the PI block component and the symmetry of microdomains is increased by the addition of PI homopolymer. Hence, the PL phase may not be formed as an intermediate structure if relatively high molecular weight PI homopolymer is added. The latter is not able to effectively fill the corners of the Wigner-Seitz cells in consequence packing frustration cannot be released and the PL phase is not favoured [152]. In contrast, the addition of low molecular weight PI homopolymer to the minor component of the PL phase reduces the packing frustration imposed on the block copolymers and stabilizes it [153]. Hence, transition from the PL to the G phase indicates an epitaxial relationship between the two structures, while the direct transition between L and G yields a polydomain structure indicative of epitaxial mismatches in domain orientations [152]. 

H. J. Choi and R. Weil, The transition from epitaxial to non-epitaxial growth in electro-deposited Ni, 1981, pp 169. 

The urethane-substituted polydiacetylenes exhibit thermo-chromic transition with low and high temperature crystal phases favoring acetylenic and butatriene backbone, respectively (4-6). Our interest in the application of epitaxial polymerization to diacetylenes has been the possibility of substrate control over orientation, structure, and the single crystal nature of thin films. 

Hydroxyapatite (with some carbonate inclusions) is the most stable of the possible calcium phosphate salts that can be formed under physiological conditions. However, it is not the most rapid one to form. Instead, octacalcium phosphate (OCP) will precipitate more readily than hydroxyapatite. This led Brown in 1987 to propose that, as the kinetically favoured compound, OCP precipitates first, and then undergoes irreversible hydrolysis to a transition product OCP hydrolyzate [68]. This hypothesis is consistent with the observation that enamel comprises hydroxyapatite crystals that have the long, plate-like morphology that is generally considered characteristic of OCP crystals [69]. Overall, it seems that enamel crystals, with their elongated form, result from early precipitation of OCP, which forms a template on which hydroxyapatite units grow epitaxially [70,71]. This leads to enamel mineralisation with the observed thin, ribbon-like structure of crystals. 

The epitaxy was maintained for CdS thicknesses up to 100 nm, after which the deposit became polycrystalhne. This transition coincided with the visual formation of CdS in the solution, which resulted in a switch of the mechanism from an ion-by-ion growth, necessary to obtain epitaxy, to one involving colloidal species. Since, in principle, conditions can be chosen so that only an ion-by-ion growth occurs, it can be expected that much thicker epitaxial films are obtainable from CD on suitable substrates. 

Figure 4.9. Scanning electron microscope photographs showing the roughening transition of 111) faces of a TiOj crystal and the formation of hollowed needle crystals as impurities are added [19]. Growth occurs by liquid phase epitaxy on a (001) substrate. Fe203 is added as an impurity in the following amounts (a) 0%. (b) 1.3 mol%,...

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