Two-step epitaxy

P. Vennegues, B. Beaumont, V. Bousquet, M. Vaille and P. Gibart, Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods ,/. Appl. Phys., 87, 4175 (2000). 

An Al-doped p-layer was grown on the p-type substrate. The p-n junction was fabricated by a second LPE process with nitrogen as a donor dopant (two-step epitaxy). 

Y. and Qin, S.Y. (2006) Multiple branched a-Mn02 nanofibers a two-step epitaxial growth. Journal of Crystal Growth, 286,156-61. 

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See also in sourсe #XX -- [ ]

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