Regrowth rate

Csepregi L, Kennedy E F, Gallagher T J, Mayer J W and Sigmon T W 1978 Substrate orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous Si J. Appi. Phys. 49 3906... 

Fig. 10.5. Regrowth rate versus 103/r (K) for different substrate orientations of amorphous-implanted Si and Ge (from Lau et al. 1980)...

As an example of (10.6), consider Fig. 10.7 where the amorphous Si regrowth rate is enhanced by implanted P. Taking the P concentration as 2.5 x 1020 cm-3 and 550°C (823 K) as the regrowth temperature, we find that the donor density is equal to the density of states in the conduction band (Mayer and Lau), which locates EP at Ec. 

Fig. 10.9. Regrowth rate versus orientation of the Si substrate for implanted amorphous Si...

The role of the a-c interface in Ion Beam Induced Epitaxial Crystallization (IBIEC) is demonstrated in Fig. 10.11, which shows that the regrowth rate is orientation dependent. The data shows that the rate is much lower (almost by a factor of 4) for (111) substrates relative to (100) substrates. These results suggest that the same interfacial defects that are responsible for thermal regrowth also are important in IBIEC, with the role of the ion beam being that of changing the average defect concentration. 

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