Molecular beam epitaxy, growth chamber

Molecular beam epitaxy (MBE) is a radically different growth process which utilizes a very high vacuum growth chamber and sources which are evaporated from controlled ovens (15,16). This technique is well suited to growing thin multilayer stmctures as a result of very low growth rates and the abihty to abmpdy switch source materials in the reactor chamber. The former has impeded the use of MBE for the growth of high volume LEDs. 

Fig. 4. Schematic of an ultrahigh vacuum molecular beam epitaxy (MBE) growth chamber, showing the source ovens from which the Group 111—V elements are evaporated the shutters corresponding to the required elements, such as that ia front of Source 1, which control the composition of the grown layer an electron gun which produces a beam for reflection high energy electron diffraction (rheed) and monitors the crystal stmcture of the growing layer and the substrate holder which rotates to provide more uniformity ia the deposited film. After Ref. 14, see text.

Osterwalder, J., T. Droubay, T. Kaspar, J. Williams, C.M. Wang and S.A. Chambers (2005). Growth of Cr-doped Ti02 films in the rutile and anatase structures by oxygen plasma assisted molecular beam epitaxy. Thin Solid Films, 484(1-2), 289-298. 

Another method for production of ceria films is by oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE). This method has been reviewed by Chambers.The advantage of the oxygen assisted plasma technique is that for certain films the dissociation of O2 is limiting in the growth of fully oxidized films. By use of a plasma source of oxygen, O atoms and ions are provided to the... 

Growth experiments were carried out in two ultra high vacuum (UHV) cambers with sublimation sources of Si, Fe and Cr and quartz sensors of film thickness. Optical properties of the samples were studied in UHV chamber VARIAN (210 10Torr) equipped with differential reflectance spectroscopy (DRS) facilities. The samples surface was studied in the second UHV chamber (1 -10 9 Torr) equipped with LEED optics. Si(100) and Si(l 11) wafers were used as substrates for different series of the growth experiments. For the growth of silicide islands, metal films of 0.01-1.0 nm were deposited onto silicon surface. Silicon overgrowth with the deposition rate of 3-4 nm/min was carried out by molecular beam epitaxy (MBE) at 600-800 °C for different substrates. The samples were then analyzed in situ by LEED and ex situ by HRTEM and by... 

Molecular-beam epitaxy of semiconductors requires the use of an ultrahigh vacuum (UHV) chamber (background pressure 10 -10 ° torr). For oxide ceramics background pressures of <10" torr are more common. The high vacuum requirement of MBE presents a problem for the growth of... 

Jones F, Rohl AL, Farrow JB, van Bronswijk W (2000) Molecular modeling of water adsorption on hematite. Phys Chem Chemical Physics 14 3209-3216 Kim YJ, Gao Y, Chambers SA (1997) Selective growth and characterization of pure, epitaxial a-Fe203(0001) and Fc304(001) films by plasma-assisted molecular beam epitaxy. Surf Sci 371 358-370 Kutteh R, Nicholas JB (1995) Implementing the cell multipole method for dipolar and charged dipolar systems. Comp Phys Com 86 236-254... 

Kim,Y.J. Gao,Y. Chambers, S.A. (1997) Selective growth and characterization of pure epitaxial a-Fe203 (001) and Fe304 (001) films by plasma assisted molecular beam expitaxy. Surface Sci. 371 358-370... 

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