Epitaxial connection

In some cases, devices have a volume element having a larger diameter than the nano element arranged in epitaxial connection to the nano element. The volume element is being doped in order to provide a high charge carrier injection into the nano element and a low access resistance in an electrical cormection. The nano element may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact [65],... 

High catalytic activity and selectivity of silicalite-l/H-ZSM-5 composites must be caused by the direct pore-to-pore connection between H-ZSM-5 and silicalite-l as revealed by Fe-SEM and TEM [43]. The silicalite-l crystals were epitaxially grown on the surface of the H-ZSM-5 crystals. 

Stimulated by these observations, Odelius et al. [73] performed molecular dynamic (MD) simulations of water adsorption at the surface of muscovite mica. They found that at monolayer coverage, water forms a fully connected two-dimensional hydrogen-bonded network in epitaxy with the mica lattice, which is stable at room temperature. A model of the calculated structure is shown in Figure 26. The icelike monolayer (actually a warped molecular bilayer) corresponds to what we have called phase-I. The model is in line with the observed hexagonal shape of the boundaries between phase-I and phase-II. Another result of the MD simulations is that no free OH bonds stick out of the surface and that on average the dipole moment of the water molecules points downward toward the surface, giving a ferroelectric character to the water bilayer. 

To design a transistor with a 1.6-GHz intrinsic we should examine the factors that affect the of the transistor. A simplified cross section of the epitaxial emitter structure is shown in Figure 6.23. The stripe geometry has been assumed. All microwave transistors are fabricated more or less with this geometry. The intrinsic part, directly under the emitter, is the active part of the transistor. The extrinsic part, which connects the intrinsic base (under the emitter) to the base contacts, is the parasitic part of the transistor. The effects of these two parts on the transistor can be evaluated by the following formula [22] ... 

Ion-etching is used to form the parallel semiconductor strips 1 from a single semiconductor body and to form the separate electrodes and their connections for each strip 1 from a metal layer deposited on the semiconductor body and on the substrate 2 (see EP-A-0007668). Alternatively, the strips 1 are formed from an epitaxial layer of one conductivity type material which is deposited on an intrinsic substrate 2 or a substrate 2 of cadmium telluride. 

A low resistance layer 2 is formed on an HgTe or HgCdTe substrate 1. The layer is etched to form interconnection strips. An insulating layer 3 of CdTe is formed followed by an epitaxially formed HgCdTe layer 4. Detector elements, 10-1 to 10-4, are formed between individual electrodes, 5-1 to 5-4, and a common electrode 6-1. The individual electrodes are formed over the edge of the HgCdTe layer and connect to the interconnection strips. Connection pads, 8-1 to 8-4, are connected to the interconnection strips and allow external connection on the same side of the detector elements as the external connection to the common electrode. 

An HgCdTe layer is epitaxially grown over the surface and individual HgCdTe detector elements 26 are formed in the recessed portions when the Si02 layer has been removed. The surface of the HgCdTe detector elements are then polished and etched before electrodes 27 are connected to connection pads 25. 

An HgCdTe layer is epitaxially grown on a first substrate. An adhesive is used to attach the HgCdTe layer to a sapphire substrate, which absorbes infrared radiation. The first substrate is removed and the epitaxially grown HgCdTe layer is shaped by etching to form detector regions 14, which are connected by electrodes 15. Photons which are not absorbed by the detector elements will be absorbed in the sapphire substrate. 

A vapor-phase diffused infrared light absorbing layer 5b of Hgi.yCd,Te is formed on a first side of a CdTe substrate 1. An Hgi.xCdxTe detector layer 6b is then formed on a second side of the substrate, opposite to the first side, by liquid-phase epitaxy. The detector layer is shaped to form detector elements which are connected by electrodes 7 and 8. The absorbing layer 5b will absorb photons which have not been absorbed by the detector elements. 

A p-type HgCdTe layer 12 is formed epitaxially on a substrate 11 of CdTe. Recessed regions 13B are formed between protruding regions 13A and 13B. N-type regions 14A-14C are formed to which connections are made by indium electrodes 16 and 17 after an insulating film 15 of ZnS has been formed. 

An Hgi.xCdxTe layer 2 is grown epitaxially on a CdTe substrate 1. The value of x has a high value at the interface with the CdTe substrate and decreases as the layer is grown. Mesas are formed in the layer 2 and n-type regions 5 are formed in the surface layer of the mesas thereby forming pn-junctions. Electrodes 9 are connected to the n-type regions. 

An Hgi-xCdxTe layer 2, in which photodiodes 3 are formed, is grown epitaxially on a silicon substrate 1. An Hgi.yCdyTe layer 4, having a composition with y > x and thereby a larger bandgap than layer 2, is formal on the silicon substrate opposite to the layer 2. The larger bandgap allows infrared radiation 10 to pass through the layer 4. The photodiodes are connected to substrate via columns 7. 

---