Epitaxial Y

No epitaxy could be obtained by reaction of the metal films with reactive gas for short reactions times. This is understandable as the carburization and nitridation reactions progress from the surface of the metal films to the substrate and occur with a change in crystal structure of the film (for instance bcc to hex). So even if the starting metal film is epitaxial, the final carbide or nitride compound could be polycrystalline. For high temperatures and for long time treatments (>15 h), however, perfect epitaxial Y Mo2N films could be obtained on MgO (100).17 In this last case, the crystalline state of the precursor metal film had no effect on the final parallel orientation of the nitride. 

Fig. 7.13 X-ray S-2S-scan of a 300nm thick epitaxial Y film on (111) Cap2 capped with 8nm Pd in situ showing the development of the close-packed lattice plane distance during reversible hydrogenation between the...

Since its discovery, most of the work on switchable mirror effect has been devoted to the study of hydrogen-induced changes in optical, electronic and structural properties in polycrystalline R metal films, as summarized in the previous section. Though some studies have been reported on single-crystalline films, for example Y films on (110) W substrates (Hayoz et al., 1998) and epitaxial Y films deposited on Nb coated (110) AI2O3 substrates (Wildes et al., 1996 Remhof et al., 1997, 1999), these samples were not suitable for optical and elec-... 

Fig. 60. Yttrium channel spectra of Pd (7 nm) capped epitaxial Y films of different thicknesses, along Y [0002] direction for 2 MeV He+ ions as function of distance from the film/substrate interface. The shaded region indicates the extra upturn of the signal, related to the mismatch-induced strain at the film/substrate interface. The inset shows the full Rutherford backscatlering spectra fa- Y film of thickness 400 nm deposited CaF2(lll) substrate...

Fig. 76. (i) RHEED pattern of [1010] direction of an epitaxial Y (0001) film taken at 20 kV. (ii) The corresponding RHEED pattern of the sample films after deposition of 5 nm of Pd over layer at 300 °C. The superstructure peaks indicates an ordered Pd-Y alloy whereas the V form of the streaks indicate facetted surface, (iii) The RHEED pattern after depositing 0.5 nm (left pattern) and 5 nm of Pd at RT. The original Y reflexes are observed to vanish immediately after deposition of 0.5 nm of Pd and an amorphous/polycrystalline overlayer is formed (Borgschulte et al., 2001). 

Sakurai M, Tada FI, Saiki K, Koma A, Funasaka FI and Kishimoto Y 1993 Epitaxial growth of Cgg and Cyq films... 

Tsao J Y 1992 Materials Fundamentals of Molecular Beam Epitaxy (New York Academic)... 

Figure 6 High-resolution transmission electron microscopy image of an epitaxial thin film of Y Ba2Cu307 j, grown on LaAI03, shown in cross section. (Courtesy of T. E. MKchell, Los Alamos National Laboratory)...

O. Pierre-Louis, C. Misbah, Y. Saito, J. Krug, P. Politi. New nonlinear evolution equation for steps during molecular beam epitaxy on vicinal surfaces. Phys Rev Lett 50 4221, 1998. 

Golan Y, Margulis L, Rubinstein I, Hodes G (1992) Epitaxial electrodeposition of cadmium selenide nanocrystals on gold. Langmuir 8 749-752... 

Golan Y, Hutchison JL, Rubinstein I, Hodes G (1996) Epitaxial size control by mismatch tuning in electrodeposited Cd(Se, Te) quantum dots on 111 gold. Adv Mater 8 631-633... 

Golan Y, Hodes G, Rubinstein I (1996) Electrodeposited quantum dots. 3. Interfacial factors controlling the morphology, size, and epitaxy. J Phys Chem 100 2220-2228... 

Inoue, T. Yamamoto, Y. Koyama, S. Suzuki, S. Ueda, Y. 1990. Epitaxial growth of Ce02 layers on silicon. Appl. Phys. Lett. 56 1332-1333. 

Amano, H. Sawaki, N. Akasaki, I. Toyoda, Y. 1986. Metalorganic vapor phase epitaxial growth of a high quahty GaN film using AIN buffer layer. Appl. Phys. Lett. 48 353-355. 

W.A. de Heer, C. Berger, M. Ruan, M. Sprinkle, X. Li, Y. Hu, et al., Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide, Proceedings of the National Academy of Sciences of the United States of America, 108 (2011) 16900-16905. 

T.J. McArdle, J.O. Chu, Y. Zhu, Z. Liu, M. Krishnan, C.M. Breslin, et al., Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates, Applied Physics Letters, 98 (2011) 132108. 

Kim,Y.J. Gao,Y. Chambers, S.A. (1997) Selective growth and characterization of pure epitaxial a-Fe203 (001) and Fe304 (001) films by plasma assisted molecular beam expitaxy. Surface Sci. 371 358-370... 

M. J. McCollum and G. E. Stillman, High Purity InP Grown by Hydride Vapor Phase Epitaxy T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation... 

Y. Miaka, S. Shimoda, M. Fukase, T. Aoba, Epitaxial overgrowth of apatite crystals on the thin-ribbon precursor at early stages of porcine enamel mineralisation, Calcif. Tissue Int. 53 (1993) 257-261. 

Vodakhov, Y. A., et al., Doping Peculiarities of SiC Epitaxial Layers Grown by Sublimation Sandwich-Method, Springer Proc. Phys., Vol. 56, 1992, pp. 329-334. 

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