Vapor phase epitaxy various substrates

In this chapter, various aspects of the growth of GaN films on porous SiC (PSC) by hydride vapor phase epitaxy (HVPE) are discussed (here, we understand that a porous SiC substrate is a SiC wafer with a several micrometer-thick porous layer in it). First, the preparation of PSC substrates under various conditions, and the properties of the PSC fabricated are described. Next, mechanisms of formation of different types of PSC structure and the stability of porous substrates under thermal and plasma treatment are considered. The final part of the chapter treats GaN epitaxial growth, film properties, and explanations for improved epitaxy provided by porous substrates. 

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