INDEX epitaxial

Gregory BW, Suggs DW, Stickney JL (1991) Conditions for the deposition of CdTe by electrochemical atomic layer epitaxy. J Electrochem Soc 138 1279-1284 Suggs DW, Stickney JL (1991) Characterization of atomic layers of tellurium electrodeposited on the low-index planes of gold. J Phys Chem 95 10056-64 Suggs DW, Stickney JL (1993) Studies of the structures formed by the alternated electrodeposition of atomic layers of Cd and Te on the low-index planes of Au. 1. LEED and Auger studies. Surf Sci 290 362-374... 

The orthogonal projection of the epitaxial poly(DMDA) could not be indexed using the unit cell data for the bulk polymerized crystal (8). However, poly(DMDA) cannot usually be polymerized to completion or to high crystallinity in the bulk due to cross-linking. The use of an epitaxial substrate may have controlled the polymerization process that led to oriented single crystals. 

Epitaxial coherency maintained for the three low-index orientations of the fee copper lattice substrate to various degrees. 

The following three mechanisms are suggested for the growth of a guest crystal in an epitaxial relation on the surface of low-index faces of a host crystal. 

A brief review of the literature concerning the several materials employed in the fabrication of both TIR and ARROW structures is given in Table 2. The processes employed are completely different, ranging from molecular beam epitaxy to several chemical vapor deposition (CVD) systems, such as low-pressure CVD (LPCVD) or plasma-enhanced CVD (PECVD). As a rule, all suitable materials for ARROWS (and in general for IOCs) should have homogeneous refractive indexes, high mechanical and chemical stability, few... 

The communications revolution also relies on a diverse set of CVD technologies. Some components are similar to those used in silicon microelectronics, but many are unique, involving complex epitaxial heterostructures of SiGe or compound semiconductor (e.g., AlGaAs) alloys that are required to yield high frequency (1-100 GHz) device operation. The communication revolution also relies on optoelectronic components, such as solid state diode lasers (another complex heterostructure device), and these devices are often grown by CVD. - Even the fiberoptic cables that transmit the optical component of the communications network are manufactured using a CVD technique to achieve the desired refractive index profile. ... 

Several strategies were appUed to produce samples for TEM and kinetic studies [8, 21], but only one route is presented here (Fig. 15.3). Noble metal nanoparticles were grown via metal evaporation on a crystalline soluble substrate (e.g., NaCl(OOl)), leading to an epitaxial growth of particles with regular shape and well-developed low-Miller index facets (Fig. 15.3). Thereafter, the metal particles were embedded in a thin (25 nm) amorphous oxide fdm, before the metal-oxide system was lifted off the substrate via flotation in water [8, 18, 20, 31]. 

The finding of a cystine stone should prompt confirmation of cystinuria by urinary analysis. It could be argued, however, that aU stone formers should be screened for cystinuria at least 10% of cystinurics form stones in which cystine cannot be detected, presumably because of epitaxis. The index of suspicion shordd be increased in patients who are relatively young stone formers and in those with a positive family history. Once a cystinuric patient is diagnosed, it is important to screen all members of the family, particularly to detect affected siblings. 

Electron diffraction from these crystals indicated a high degree of crystallinity in both the trimer and polymer, and indexing of the patterns required the use of new unit cells different from the usual structures(Figure 4). X-ray diffrac-tometry was used to provide structural information about the third dimension in these epitaxially crystallized films. It should be noted that the characteristic spacing determined by X-ray diffrac-tometry is the b-axis, only if the unit cell is orthorombic (Table II). 

Cohen, P.I., Petrich, G.S., Pukite, P.R., Whaley, G.J., and Arrott, A.S., Birth-death models of epitaxy I. Diffraction oscillations from low index surfaces. Surf. ScL, 216, 222, 1989. 

A.J. Melmed and N.D. Shinn. Nucleation and Epitaxial Growth of Cr Crystals on Stepped W Surfaces with Low-Index Facets. Surf. Sci. 193 475 (1988). 

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