Epitaxial silicon, plasma enhanced

Reif, R., Low Temperature Silicon Epitaxy by Plasma Enhanced CVD, Proc. 5th European Conf. on CVD, (J. Carlsson and J. Lindstrom, eds.), pp. 13-19, Univ. ofUppsala, Sweden (1985)... 

This reaction was also used to deposit epitaxial silicon at the temperature range of 1000-1040°C, but the deposit was generally unsatisfactory and the reaction is no longer used for that purpose. However, if the reaction is enhanced with a plasma using electron cyclotron resonance (ECR), fluxes may be independently controlled and high-quality epitaxial silicon deposits are obtained at temperatures below 500°C.P 1... 

Epitaxial Silicon Wafers using Plasma-Enhanced, Chemical-V apor-Deposition... 

Epitaxial Silicon Wafers using Plasma-enhanced Chemical-Vapor-Deposition 291... 

For epitaxial silicon wafers, product design focuses on optimizing the geometry of the plasma-enhanced, chemical-vapor-deposition (PECVD) reactor. To increase productivity, and maintain acceptable thickness uniformity, on the order of 5%, a simple optimization strategy locates a design that completes the deposition in 62 s. Then, for a standard manufacturing process, the economics are driven by the wafer costs, which are provided by a vendor at 206/wafer. At a sales price of 260/epitaxial wafer, the investor s rate of return is 18.3% and the return on investment is 25.3%. 

D. A. Brass and A. G. Lee, The Production of Epitaxial Silicon Wafers via Plasma Enhanced Chemical Vaposition, Univ. Pennsylvania, Towne Library, 2003. 

The next three chapters review the deposition of thermally-induced dielectric films (Chapter 3) and metallic conducting films (Chapter 4), as well as plasma-enhanced films of either type (Chapter 5). The many chemical systems employed to create these films are considered, and the nature of the resulting films is presented. Films studied are silicon dioxide, silicon nitride, polysilicon, epitaxial silicon, the refractory metal silicides, tungsten and aluminum. 

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