Selective Area Growth and Epitaxial Lateral Overgrowth of GaN

9 Selective area growth and epitaxial lateral overgrowth of GaN 

FIGURE 1 SEM images of MOVPE-grown GaN hexagonal pyramids on a Si02 mask patterned on GaN/LT AIN buffer/sapphire at the growth temperatures of (a) 1010, (b) 1025, and (c) 1050°C [5J. 

FIGURE 2 (a) Emission current and anode voltage characteristic of MOVPE-grown Si-doped GaN hexagonal pyramids on a SiQ2 mask patterned on GaN/HT AIN buffer/6H-SiC and (b) Fowler-Nordheim plot of I-V data [3], 

Historically, the ELO technique was first developed in Si [16] and then in III-V compounds such as GaAs [17] and InP [18] for obtaining high-quality crystal layers on an Si02 intermediate layer. The aim has been to fabricate new types of device and to realise the cleavage of lateral epitaxial films for transfer (CLEFT) method. This method was also found to be very effective for reducing threading 

FIGURE 4 Cross-sectional TEM [1120] image taken from the area near the interface between the HVPE- and MOVPE-grown GaN layers with g = llOO. The ELO GaN layer was fabricated by HVPE on a Si02 1120 stripe patterned on a GaN epilayer [25]. 

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