Epitaxy buffer layer

Frequency Adaptive Electronics, Contract DAAHO, 1-97-C-R230, DARPA STTR Phase I Grant, 1998 and S.S. Shoup, S. Shanmugam, D. Cousins, A.T. Hunt, M. Paranthaman, A. Goyal, P. Martin, and D.M. Kroeger, Low-Cost Combustion Chemical Vapor Deposition of Epitaxial Buffer Layers and Superconductors, IEEE Transactions on Applied... 

Shoup SS, Shanmugham S, Cousins D, Hunt AT (1999) Low-cost combustion chemical vapour deposition of epitaxial buffer layers and superconductor. IEEE Trans on Appl Superconductiv 9 2426-2429... 

Due to their high density of small pores, PS layers are considered to be a flexible material which may avoid the use of an intermediate epitaxial buffer layer. Hence, PS substrate has been studied as a candidate for the growth of GaN films by metal organic vapor phase epitaxy (MOVPE). It is expected a relaxation of stress and the reduction of defect density of the GaN films, caused by the large misfit between GaN layers and Si substrate, by straining small crystalline columns in PS layers... 

Prod homme, P., F. Maroun, R. Cortes, and P. Allongue. 2008. Electrochemical growth of ultraflat Au(lll) epitaxial buffer layers on H-Si(lll). Appl. Phys. Lett. 93 171901. 

A schematic of epitaxial growth is shown in Fig. 2.11. As an example, it is possible to grow gallium arsenide epitaxially on silicon since the lattice parameters of the two materials are similar. On the other hand, deposition of indium phosphide on silicon is not possible since the lattice mismatch is 8%, which is too high. A solution is to use an intermediate buffer layer of gallium arsenide between the silicon and the indium phosphide. The lattice parameters of common semiconductor materials are shown in Fig. 2.12. 

Amano, H. Sawaki, N. Akasaki, I. Toyoda, Y. 1986. Metalorganic vapor phase epitaxial growth of a high quahty GaN film using AIN buffer layer. Appl. Phys. Lett. 48 353-355. 

S. Goler, C. Coletti, V. Piazza, P. Pingue, F. Colangelo, V. Pellegrini, et al., Revealing the atomic structure of the buffer layer between SiC(OOOl) and epitaxial graphene, Carbon, 51 (2013) 249-254. 

A ,Ga)As buffer layer is grown before epitaxy of (Ga,Mn)As. To control strain in the film, strain-relaxed thick (In,Ga)As ( 1 /zm) with the lattice constant a0 greater than the subsequent (Ga,Mn)As layer can be employed. The Mn composition x in the Gai - Mn As films can be determined from measurements of a0 by x-ray diffraction (XRD), once the dependence a0(x)is calibrated by other means, such as electron probe micro-analysis (EPMA) or secondary ion mass spectroscopy (SIMS). 

The silicon is etched away in the window 6 down to and exposing the sapphire surface 7. The surface 7 is cleaned and a buffer layer 8 of CdTe is grown. In the next step two layers 9 and 10 of HgCdTe are grown by metal-organic vapour phase epitaxy, MOVPE. The layers 9 and 10... 

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