Lateral epitaxial overgrowth LEO

It should be noted that a reduction in the threading dislocation density in GaN has been achieved through the application of selective area epitaxy and lateral epitaxial overgrowth ((LEO), also known as epitaxial lateral overgrowth (ELO), or epitaxial laterally grown GaN (ELOG)). This epitaxial technique is discussed in Datareview B2.10 in this book. 

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