Epitaxial synthesis deposition

Physics and chemistry researchers approach III—V synthesis and epitaxial growth, ie, growth in perfect registry with the atoms of an underlying crystal, differently. The physics approach, known as molecular beam epitaxy (MBE), is essentially the evaporation (14—16) of the elements, as illustrated in Figure 4. The chemistry approach, organometaUic chemical vapor deposition (OMCVD) (17) is exemplified by the typical chemical reaction ... 

A variety of compound semiconductors have been successfully prepared by this technique. Much of the work concerning ECALE has been concentrated on the deposition of CdTe on An substrates. Notwithstanding the inherent problems of the system (for instance, a 10% lattice mismatch), the formation of CdTe epitaxial layers became a model example of ECALE synthesis. In their pioneering studies, Stickney and co-workers [27, 28] have focused on the deposition of the compound on... 

Electrocatalytic activity of supported metal particles has been investigated on surfaces prepared in an ultrahigh vacuum (UHV) molecular beam epitaxy system (DCA Instruments) modified to allow high throughput (parallel) synthesis of thin-film materials [Guerin and Hayden, 2006]. The system is shown in Fig. 16.1, and consisted of two physical vapor deposition (PVD) chambers, a sputtering chamber, and a surface characterization chamber (CC), all interconnected by a transfer chamber (TC). The entire system was maintained at UHV, with a base pressure of 10 °mbar. Sample access was achieved through a load lock, and samples could be transferred... 

Fig. 2.2 Bottom-up synthesis methods, (a) Catalytic vapor deposition (b) epitaxial growth from SiC.

For their rich potential in various applications described in the previous section, the synthesis and assembly of various ZnO micro and nanostructures have been extensively explored using both gas-phase and solution-based approaches. The most commonly used gas-phase growth approaches for synthesizing ZnO structures at the nanometer and micrometer scale include physical vapor deposition (40, 41), pulsed laser deposition (42), chemical vapor deposition (43), metal-organic chemical vapor deposition (44), vapor-liquid-solid epitaxial mechanisms (24, 28, 29, 45), and epitaxial electrodeposition (46). In solution-based synthesis approaches, growth methods such as hydrothermal decomposition processes (47, 48) and homogeneous precipitation of ZnO in aqueous solutions (49-51) were pursued. 

Thin film science and technology is the deposition and characterization of layered structnres, typically less than a micron in thickness, which are tailored from the atomic scale upwards to achieve desired functional properties. Deposition is the synthesis and processing of thin films under controlled conditions of chemical processing. Chemical vapor deposition (CVD) and gas-phase molecular beam epitaxy (MBE) are two processes that allow control of the composition and structure of the films. Characterization is the instrumentation that use electrons, X-ray, and ion beams to probe the properties of the film. Epitaxial films of semiconductors are used for their electronic properties to emit light in the infrared (IR) and the ultraviolet rays. 

Fundamental aspects of vapor-liquid-solid (VLS) semiconductor nanowire growth are presented here. The synthesis of VLS semiconductor has been extended to different reaction media and pathways from the early chemical vapor deposition (CVD) approach, including solution-liquid-solid (SLS) and supercritical fluid-liquid-solid (SFLS), laser-catalyzed growth, and vapor-liquid-solid-epitaxy. The properties of nanowires grown by these VLS embodiments are compared. In this entry, VLS growth of nanowire heterostructures and oriented and hyperbranched arrays is examined. In addition, surface passivation and functionalization are assessed, and the importance of these techniques in the progress toward VLS produced nanowire devices is detailed. 

Charge carriers in semiconductors can be confined in one spatial dimension (ID), two spatial dimensions (2D), or three spatial dimensions (3D). These regimes are termed quantum films, quantum wires, and quantum dots as illustrated in Fig. 9.1. Quantum films are commonly referred to as single quantum wells, multiple quantum wells or superlattices, depending on the specific number, thickness, and configuration of the thin films. These structures are produced by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) [2j. The three-dimensional quantum dots are usually produced through the synthesis of small colloidal particles. 

In contrast, physical techniques of thin film synthesis are based upon evaporation or sputtering of elemental or multicomponent sources and subsequent deposition of this material onto a substrate molecular precursors do not play a significant role in thin film synthesis via these techniques. Examples of physical techniques used to prepare thin films include (1) Molecular Beam Epitaxy (2) sputtering, ... 

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