Epitaxial growth techniques

Recent texts have assembled impressive information about the production, characterisation and properties of semiconductor devices, including integrated circuits, using not only silicon but also the various compound semiconductors such as GaAs which there is no room to detail here. The reader is referred to excellent treatments by Bachmann (1995), Jackson (1996) and particularly by Mahajan and Sree Harsha (1999). In particular, the considerable complexities of epitaxial growth techniques - a major parepisteme in modern materials science - are set out in Chapter 6 of Bachmann s book and in Chapter 6 of that by Mahajan and Sree Harsha. 

The single-crystal GaAs wafers are used as substrates for the growth of very thin layers of the same or other III-V compounds having the desired electronic or optical properties. Such crystal growth, in which the substrate determines the crystallinity and orientation of the grown layer, is called epitaxy, and a variety of epitaxial growth techniques are used in III-V display and device production. 

Synthesis oTThin Film GaN and Epitaxial Growth Techniques... 

In this chapter, the epitaxial growth techniques are reviewed in Sec. H, the characterization of single crystals and epilayers is discussed in Sec. Ill, and finally the physical properties of SiC are summarized in Sec. IV. 

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