Epitaxial growth morphologies

Twinning and epitaxial growth are also methods of controlled growth, and therefore crystals grown by these methods often exhibit a very different characteristic morphology from that of coexisting single crystals. 

Organic matrices with a capactiy to act as morphological catalyst in the deposition of minerals must consequently be crystalline in nature. In the literature, colloidal or amorphous phases are frequently postulated as organic starting materials in biomineralization. Such a viewpoint, however, is not consistent with oriented epitaxial growth. 

The morphology and optical properties of Si samples implanted by Fe, Cr and Mg ions have been studied before and after pulsed annealing by laser and ion beams. Ultrahigh vacuum cleaning and epitaxial growth of Si films with thickness up to 500 nm have been carried out for Si with Fe and Cr silicide nanocr>stallites. Optimum conditions of pulsed treatments have been determined for all samples. 

Previous morphological studies of 3D Ag crystallite formation in the OPD range on electrochemically grown silver single crystal faces (100) and (111) showed an epitaxial growth of isolated 3D Pb crystallites as shown in Fig. 4.17 [4.54-4.56, 4.69, 4.75-4.77]. 

Fig. 11 Cross-sectional electron micrographs of Geo.94 Snoo6- Top panel shows atomically flat film surface morphology, middle panel shows the exceptional uniformity of the film fhickness. Bottom panel is a high-resolution electron micrograph of the interface region showing virtually perfect epitaxial growth. Arrows indicate the location of misfit dislocations. (From Ref. l) (View this art in color at www. dekker.com.)...

Epitaxial growth on porous 3C-SiC substrates of different thickness were performed to determine which porous network thickness would result in the best film quality. Although the thickest porous substrate available (72 pm) seemed to have the best surface morphology, LPTL results concluded that the 52 pm thick porous structure actually had the highest film quality. The epitaxial layer grown on the RIE etched porous 3C-SiC of 52 pm thickness, produced a photoluminescence intensity 10 times that compared with the growth on standard 3C-SiC porous. This... 

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