Inorganic atomic layer epitaxy

Atomic layer deposition (ALD), originally termed atomic layer epitaxy, was pioneered and patented by T. Suntola and coworkers for growing ZnS (Suntola and Antson, 1977). Initial motivation for the development of ALD came from thin film electroluminescent displays. After extensive research advances in the past 40 years, ALD, which allows deposition at the atomic or molecular level, can be used for a variety of thin films such as metal oxides and nitrides, polymers, and inorganic—organic... 

It is known from the well-documented inorganic epitaxy studies that substrates play a crucial role in determining the adlayer structures. Related rules have been established for organic layers [215]. Parameters Uke the atomic lattice constant, crystalline orientation, and atomic steps have to be taken into... 

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