Epitaxial layer transfer

N. Sato, K. Sakaguchi, K. Yamagata, Y. Fujiyama, J. Nakayama, T. Yonehara, Advanced quality in epitaxial layer transfer by bond and etch-back of porous Si,]pn J. Appl. Phys., Part 1, 2B, 973-977 (1996). 

Epitaxial Layer TRANsfer (ELTRAN) process 6 Layer transfer processes (LTP) 6 Quasimonocrystalline silicon process (QMS) 6 Silicon-On-Nothing (SON) 6 Sintering 1 Surface energy 3... 

The short penetration depth of UV/blue photons is the reason that frontside CCD detectors have very poor QE at the blue end of the spectrum. The frontside of a CCD is the side upon which the polysilicon wires that control charge collection and transfer are deposited. These wires are 0.25 to 0.5 /xm thick and will absorb all UV/blue photons before these photons reach the photosensitive volume of the CCD. For good UV/blue sensitivity, a silicon detector must allow the direct penetration of photons into the photosensitive volume. This is achieved by turning the CCD over and thinning the backside until the photosensitive region (the epitaxial layer) is exposed to incoming radiation. 

An epitaxial layer 11 of Hg0.nCd0.2Te is grown on a CdTe substrate 10. Charge accumulation regions 7 are provided in the epitaxial layer. Read-out diode regions 8 are formed by selectively growing Hgo.7Cdo.3Te. Accumulation electrodes 1, transfer electrodes 2 and readout electrodes 9 complete the structure. 

If a temperature drop exists between the source and the substrate, a pressure difference occurs for all three major components of the vapour (for Si, SiC2 and Si2C) and the vapour flows from the source to the substrate. The source evaporates, whereas an epitaxial layer is deposited on the substrate. Most methods of growing SiC by sublimation are based on material transfer in a temperature gradient. It has been noted by Vodakov and Mokhov [6], however, that the most effective material transport occurs when the source and substrate are... 

Layer transfer for semiconductor epitaxy and solar cells Lowered meehanieal strength >50 % (mesopores) (Yonehara et al. 1994 Terheiden etal. 2011)... 

For example, in the chloride method of silicon vapor-phase homoepataxy, the temperature at which a perfect epitaxial layer grows is 1250°C (the so-called diffusion region where the limiting stage of the process is the transfer of reagents to the solid-phase surface), which is... 

Fig. 3.16 C Is X-ray photoelectron spectra from graphene sheets grown epitaxially in multilayer stacks on SiC(OOOl). Spectra are shown for the as-grown surface and the surface following two transfers. Reprinted from Unarunotai, S., Koepke, J. C., Tsai, C. -L., Du, F., Chialvo, C. E., Murata, Y., Haasch, R., Petrov, I., Mason, N., Shim, M., Lyding, J., Rogers, J. A. Layer-by-Layer Transfer of Multiple, Large Area Sheets of Graphene Grown in Multilayer Stacks on a Single SiC Wafer. ACS Nano, 4, 5591 (2010). Copyright 2010 American Chemical Society...

Atomic force microscopy, polysilanes, 3, 599 Atomic layer epitaxy, for semiconductor growth, 12, 11 Atom transfer radical polymerization type reactions, isotope labeling studies, 1, 567... 

To reduce the problem of interface states which may trap signal charge in a CCD, it is proposed in JP-A-57169278 to use an epitaxially grown cadmium telluride layer as an insulator between the transfer electrodes and an HgCdTe semiconductor layer. 

A p-type CdTe single crystal wafer 12 is used to seed the epitaxial growth of a p-doped Hgi-xCdjTe spillover layer 14, a p-doped Hgi.yCdyTe absorber layer 16, a p-doped Hgi.zCdzTe transfer layer, and a p-doped Hgi.zCdzTe channel layer 20. A CCD gate structure is formed on... 

A cadmium telluride layer 12 is epitaxially grown on a mercury cadmium telluride layer 11. Transfer electrodes are formed on the cadmium telluride layer, which functions as an insulating film. The interface between layer 11 and 12 can be made with a low concentration of crystal defects. 

An imager comprising detectors formed in an HgCdTe layer which has been epitaxially grown on a semiconductor layer of a different material, the semiconductor layer comprising a charge transfer element, is disclosed in US-A-4553152. 

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