Epitaxial methods for the preparation of NSSE

Nozik and Memming have worked extensively on the electrochemistry and photoelectrochemistry of quantum well semiconductor electrodes (14). As discussed in Section 9.5.1, the quantum wells are produced by either MBE or MOCVD method. Both of these techniques are capable of creating epitaxial layers exhibiting quantum size effects. Their properties can be varied by film thickness, interfacial abruptness, and crystalline perfection. 

In MBE, ultra-high vacuum chambers are outfitted with a number of evaporation cells. Each cell has a shutter to control the molecular flux. The molecular beam can be pulsed within 0.1 sec and the growth rate can be controlled within a few A sec f During the growth, the substrate temperature is maintained at ca. 500-700 °C. Atomic species most commonly used include Al, In, Sb, Be, Ge, Se, Te, Cd, Hg, Zn, Mn, Pb, and Si. The most common quantum well electrodes produced by MBE are the III-V semiconductors binary and ternary compounds. Some II-VI quantum well structures have also been prepared. 

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