Vapor phase epitaxy device results

Epitaxial Layers. Epitaxial deposition produces a single crystal layer on a substrate for device fabrication or a layer for multilevel conductive interconnects which may be of much higher quality than the substrate. The epitaxial layer may have a different dopant concentration as a result of introducing the dopant during the epitaxial growth process or may have a different composition than the substrate as in silicon on sapphire. Methods used for epitaxial growth include chemical vapor deposition (CVD), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). [Pg.234]

C. Elliott, N. Gordon, R. Hall, T. Phillips, A. White, C. Jones, C. Maxey, N. Metcalfe, Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices. J. Electron. Mat 25(8), 1139-1145 (1996)... [Pg.249]