Mechanism liquid-phase epitaxy

M. Konuma, ed. by Y. Pauleau. Feature and Mechanisms of Layer Growth in Liquid Phase Epitaxy of Semiconductor Materials, in Chemical Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies (Springer, Berlin, 2002), p. 384... 

Bauser, E., 1994, Atomic mechanisms in semiconductor liquid phase epitaxy, in Handbook of Crystal Growth, Vol. 2b, ed. D.T.J. Hurle (North-Holland, Amsterdam) ch. 20, pp. 880-939. 

For their rich potential in various applications described in the previous section, the synthesis and assembly of various ZnO micro and nanostructures have been extensively explored using both gas-phase and solution-based approaches. The most commonly used gas-phase growth approaches for synthesizing ZnO structures at the nanometer and micrometer scale include physical vapor deposition (40, 41), pulsed laser deposition (42), chemical vapor deposition (43), metal-organic chemical vapor deposition (44), vapor-liquid-solid epitaxial mechanisms (24, 28, 29, 45), and epitaxial electrodeposition (46). In solution-based synthesis approaches, growth methods such as hydrothermal decomposition processes (47, 48) and homogeneous precipitation of ZnO in aqueous solutions (49-51) were pursued. 

In our opinion, this mechanism of layer-by-layer growth also takes place in the epitaxy, in particular, the vapor-phase epitaxy, which proceeds by so-called vapor —liquid —solid... 

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