Epitaxial growth solid phase epitaxy

Solid-Phase Chemical Equilibrium. For the growth of multicomponent films, the solid film composition must be predicted from the gas-phase composition. In general, this prediction requires detailed information about transport rates and surface incorporation rates of individual species, but the necessary kinetics data are rarely available. On the other hand, the equilibrium analysis only requires thermodynamic data (e.g., phase equilibrium data), which often are available from liquid-phase-epitaxy studies, as discussed by Anderson in Chapter 3. 

Epitaxial Layers. Epitaxial deposition produces a single crystal layer on a substrate for device fabrication or a layer for multilevel conductive interconnects which may be of much higher quality than the substrate. The epitaxial layer may have a different dopant concentration as a result of introducing the dopant during the epitaxial growth process or may have a different composition than the substrate as in silicon on sapphire. Methods used for epitaxial growth include chemical vapor deposition (CVD), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). 

K. Radermacher, S. Mantl, Ch. Dieker, H. Ltith, C. Freiburg. Growth kinetics of iron silicides fabricated by solid phase epitaxy or ion beam synthesis // Thin Solid Films.- 1992.-V.215, No.l.- P.76-81. 

Fig. 10.6. Growth rate versus 1/kT for solid-phase epitaxial regrowth of implanted amorphous Si on (100) Si (from Olson and Roth 1988)...

All vapor phase epitaxial growth processes involve the interaction of the vapor with the surface of the solid phase, thereby demanding the inclusion of heterogeneous kinetics into the overall rate discussion. The typical description of surfaces is a model based on the hypothesis that surfaces are composed of a fixed number of sites on which... 

T. Motooka, K. Nisihira, S. Munetoh, K. Motiguchi, A. Shintani, Molecular-dynamics simulations of solid-phase epitaxy of Si growth mechanisms. Phys. Rev. B 61,8537-8540 (2000)... 

E. Lampin, C. Krzeminski, Molecular dynamics simulations of the solid phase epitaxy of Si growth mechanism and orientation effects. J. Appl. Phys. 106, 063519 (2009)... 

Liquid-phase epitaxy (LPE), flux growth Solid growth... 

Solid phase epitaxy and film growth can only occur when reaction source materials need not diffuse far to react to form the final film, there should be no product species that need to escape from the reaction region. 

If neither the AC nor the BC component exhibits in any part of its (zero pressure) (x, T) phase diagram the structure a, which though exists in their solid solution, then the latter is of Type III . In this case, the alloy environment stabilizes a structure which is fundamentally new to at least one of its components. Such alloy-stabilized phases with no counterpart in the phase diagram of the constituent components can be formed in bulk equilibrium growth and may be distinguished from the unusual alloy phases that are known to form in extreme non-equilibrium growth methods and in epitaxial forms. 

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