Hydride vapor phase epitaxy

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... 

M.J. McCollum and G.E. Stillman, High Purity InP Grown by Hydride Vapor Phase Epitaxy... 

M. J. McCollum and G. E. Stillman, High Purity InP Grown by Hydride Vapor Phase Epitaxy T. Inada and T. Fukuda, Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorous Encapsulated Czochralski Method O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, and R. Hirano, InP Crystal Growth, Substrate Preparation and Evaluation... 

R. J. Molmr, Hydride Vapor Phase Epitaxial Growth of TTI-V Nitrides T. D. Moustakas, Growth of III-V Nitrides by Molecular Beam Epitaxy Z. Liliental-Weber, Defects in Bulk GaN and Homoepitaxial Layers C G. Van tie Walk and N. M. Johnson, Hydrogen in III-V Nitrides... 

D. J. Diaz, T. L. Williamson, I. Adesida, P. W. Bohn, and R. J. Molnar, Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire, J. Appl. Phys. 94, 7526-7534 (2003). 

Currently, the available single crystal GaN substrates are limited by the size and point defects that make them unsuitable for mass production [1]. An alternative to native GAN substrates is to use free-standing GaN templates prepared by hydride vapor phase epitaxy (HVPE), which has a typical thread dislocation (TD) density of 105-106 cm-2, however, the high price limits their availability [2],... 

Y. Oshima, T. Eri, M. Shibata, H. Sunakawa and A. Usui, Fabrication of freestanding GaN wafers by hydride vapor-phase epitaxy with void-assisted separation , Phys. Status Solidi A, 194, 554-558 (2002). 

In this chapter, various aspects of the growth of GaN films on porous SiC (PSC) by hydride vapor phase epitaxy (HVPE) are discussed (here, we understand that a porous SiC substrate is a SiC wafer with a several micrometer-thick porous layer in it). First, the preparation of PSC substrates under various conditions, and the properties of the PSC fabricated are described. Next, mechanisms of formation of different types of PSC structure and the stability of porous substrates under thermal and plasma treatment are considered. The final part of the chapter treats GaN epitaxial growth, film properties, and explanations for improved epitaxy provided by porous substrates. 

V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova, E. Valcheva, B. Monemar, Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J. Appl. Pbys., 88, 6252-6259 (2000). 

L.T. Romano, B.S. Krusor, R.J. Molnar, Structure of GaN films grown by hydride vapor phase epitaxy, Appl. Pbys. Lett., 71, 2283-2285 (1997). 

M.K. Kelly, R.P. Vaudo, V.M. Phanse, L. Gorgens, O. Ambacher, M. Stutzmann, Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff, Jpn. J. Appl. Phys. 38 (1999) L217-L220. 

T. Yoshida, Y. Oshima, T. Eri, K. Ikeda, S. Yamamoto, K. Watanabe, M. Shibata, T. Mishima, Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method, J. Cryst. Growth 310 (2008) 5—7. 

For commercially available samples, the major fabrication method is hydride vapor phase epitaxy (HVPE). In the HVPE method, GaCl and NH3 react to produce GaN, with H2 and HCl gases as by-products GaCl + NH3 —) GaN + H2 + HCl (Maruska Tietjen, 1969) (Fig. 3). 

Hattori A. N., Endo K., Hattori K. Daimon H. (2009) GaN(OOOl) surfaces on commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultra high vacuum Applied Surface Science, Vol. 256, pp 4745-4756. 

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