Anisotropic epitaxial growth

Both macroporous and mesoporous silicon are similarly exploited to achieve various types of separation and/or seed layers by high-temperature anneal and formation of active layer by epitaxial growth or epitaxial free processing (Depauw et al. 2008, 2009 Brendel et al. 2010). Similar studies of void shape evolution and SON (silicon-on-nothing) structure formation from masked anisotropic reactive ion etching resulting in square arrays of holes during H2 anneal were shown in Sudoh... 

Fig. 9 (A) Schematic illustration of the VLSE process. (B) Tilted SEM image of vertical Si nanowire array grown on a (111) Si wafer. (C) Tilted SEM image of Si nanowire array grown on Si(l 0 0). (From Ref. f) Three of the four equivalent (111) directions are indicated by the white arrows. (D) Cross-sectional SEM images of a 4 im-wide, anisotropically etched trench in a Si(l 1 0) wafer. (E) Au-catalyzed, lateral epitaxial nanowire growth across an 8 tm-wide trench, connecting to opposing sidewall. (From Ref.P f)...

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