Epitaxial growth manipulation

Despite the potential for atomic-scale manipulation of interfaces displayed by molecular-beam epitaxial growth, a majority of the vapor-phase growth of silicon is accomplished by the reaction of silane with silicon substrates This... 

It has been widely demonstrated that the preparation of oriented, and in some cases epitaxial films by CSD is possible, despite the relatively large thickness of the films that is deposited in a single step. Lange ° reviewed the various mechanisms that lead to oriented growth, and a variety of factors including reactions at the electrode interface, - organic content within the film," " and the use of seed layers" to promote homoepitaxy have been discussed. The ability to control film properties (remanent polarization, dielectric constant, etc.) through manipulation of film orientation has also been shown. 

The significant vapor pressure of compound 26 allowed rapid mass transport of the precursor at 22 °G and the facile decomposition pathway resulted in film growth at temperatures as low as 200 °G. Epitaxial GaN films were deposited from 26 at 650 °G via LPGVD. " The growth rate of the GaN films deposited was 800 A min Despite these excellent growth properties, the high reactivity of 26 necessitates careful manipulation of the neat product, as a vigorous exothermic decomposition can result. 

The method of templated self assembly has been recently successfully implemented for the growth of ordered arrays of InAs as well as Ge islands in 2-and 3-dimensional arrays and quantum dot crystals [1] by molecular beam epitaxy (MBE). The quantum dot arrays fabricated by templated self-assembly exhibit narrow size distributions and perfect ordering [2]. Thus, this technology enables fabrication of nanodevices requiring exact positioning of quantum dots [3] and offers a suitable path for the demonstration of spintronics and manipulation of qubits [4]. 

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