Epitaxy goals

The primary goal of the researchers has been to produce Q-dots possessing all of the attributes of the Q-dots prepared using liquid-phase synthetic methods (that is adjustability of the nanocrystal identity and diameter and size monodispersity) and also the technological utility of Q-dots prepared by MBE (specifically, the deposition of nanocrystals with a defined orientation and an electrical output contact). It was shown that the E/C-synthesized 5-CuI and CdS Q-dots were indeed epitaxial with narrow size distribution and strong photoluminescence tunable by the particle size. Qne of the advantages of the E/C method is that it can be made size selective. The key point is that the size as well as the size dispersion of product nanoparticles are directed actually by the corresponding properties of the metal nanoparticles therefore the first deposition step assumes special importance. 

Molecular beam epitaxy is a widely used technique for growing structures on crystal surfaces. One of the goals is to be able to control the growth process to such extent that one can make the nanostructures complex enough for a particular purpose. An ambitious example is a quantum computer. ... 

Crystallization amounts by nature to the self-assembly of very large, boundaryless supramolecular species. Its control is a goal of major importance in order to be able to generate solid-state materials of specific structural and physical properties (see also Sections 7.1, 7.2, 9.4.4 [7.39-7.42, 9.105, 9.245]). Supramolecular effects play a crucial role. Directional growth of materials may be induced by a template and involve molecular recognition [9.246], occurring by epitaxy [9.247] or on oriented thin films [9.248]. 

The cubic polytype of SiC, namely 3C-SiC, is the only form that can be grown hetero-epitaxially on Si substrates. However, there exists a 20 % lattice mismatch between these two crystal systems and the hope was that growth on a porous buffer layer might provide a means to reduce the defect density. This section presents preliminary research performed with this goal in mind. 

Suppose that a thin film is bonded to one surface of a substrate of uniform thickness hs- It will be assumed that the substrate has the shape of a circular disk of radius R, although the principal results of this section are independent of the actual shape of the outer boundary of the substrate. A cylindrical r, 0, z—coordinate system is introduced with its origin at the center of the substrate midplane and with its z—axis perpendicular to the faces of the substrate the midplane is then at z = 0 and the film is bonded to the face at z = hs/2. The substrate is thin so that hs R, and the film is very thin in comparison to the substrate. The film has an incompatible elastic mismatch strain with respect to the substrate this strain might be due to thermal expansion effects, epitaxial mismatch, phase transformation, chemical reaction, moisture absorption or other physical effect. Whatever the origin of the strain, the goal here is to estimate the curvature of the substrate, within the range of elastic response, induced by the stress associated with this incompatible strain. For the time being, the mismatch strain is assumed to be an isotropic extension or compression in the plane of the interface, and the substrate is taken to be an isotropic elastic solid with elastic modulus Es and Poisson ratio Vs the subscript s is used to denote properties of the substrate material. The elastic shear modulus /Xg is related to the elastic modulus and Poisson ratio by /ig = Es/ 1 + t s). 

While considerable progress was made in thin-fihn growth of nonpolar GaN from 2000-2002, thick-film or bulk growth of nonpolar orientations continued to be elusive until late 2002. The performance of nonpolar GaN-based devices would be limited by the lack of low-defect density film and substrate options. This chapter describes the progress achieved in thick-film nonpolar GaN growth via hydride vapor phase epitaxy (HVPE) toward the goal of producing low-defect density nonpolar GaN thick-films and substrates. 

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