Metalorganic vapor-phase epitaxy

Metalorganic Vapor Phase Epitaxy 1992," ia the Proceedings of the Sixth International Conference on Metalorganic Papor Phase Epitayy, Cambridge, Mass., June 1992 8—11, G. B. StriugfeUow and. J. Coleman, eds.,/ CystalGrowth, 124(1—4) (Nov. 1992). 

Watanabe, N. Nakanisi, T. Dapkus, P. D., Eds. Metalorganic Vapor Phase Epitaxy, Proceedings of the 4th International Conference (MOVPE-4), Hakone, 1988. 

T. Nakanisi, Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers T. Mimwra, High Electron Mobility Transistor and LSI Applications... 

T Nakanisi, Metalorganic Vapor Phase Epitaxy for High-Quality Active Layers T. Mimura, High Electron Mobility Transistor and LSI Applications T. Sugeta and T. Ishibashi, Hetero-Bipolar Transistor and Its LSI Application H. Matsueda, T. Tanaka, and M. Nakamura, Optoelectronic Integrated Circuits... 

Amano, H. Sawaki, N. Akasaki, I. Toyoda, Y. 1986. Metalorganic vapor phase epitaxial growth of a high quahty GaN film using AIN buffer layer. Appl. Phys. Lett. 48 353-355. 

GaN, 3.4 eV bandgap, is known to be a material generally resistant to corrosion and bence of interest for application in pbotoelectrocbemical cells. Kocba and co-workers prepared n-GaN using metalorganic vapor phase epitaxy on sapphire substrates,... 

Mullin JB, Irvine SJC (1994) Metalorganic Vapor-Phase Epitaxy of Mercury Cadmium Telluride. Progress in Crystal Growth and Characterization of Materials 29(1-4), 217-252... 

J.R. Creighton, W.G. Breiland, M.E. Coltrin, and R.P. Pawlowski. Gas-Phase Nanoparticle Formation during AlGaN Metalorganic Vapor Phase Epitaxy. Appl. Phys. Lett., 81 2626-2628,2002. 

D.I. Fotiadis, S. Kieda, and K.F. Jensen. Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy I. Effects of Heat Transfer Characteristics, Reactor Geometry, and Operating Conditions. J. Cryst. Growth, 102 441—470,1990. 

Kawai, H., and Onabe, K., eds. (2000). Proceedings of the Tenth International Conference on Metalorganic Vapor Phase epitaxy, IC-MOVPEX, Elsevier Science B. V., Amsterdam. 

Park, W. I., Kim, D. H., Jung, S. W., and Yi, G. C. (2002). Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods. Appl. Phys. Lett. 80 4232-4234. 

P. Gibart, Metalorganic vapor phase epitaxy of GaN and lateral overgrowth , Rep. Prog. Pbys, 67, 667-716 (2004). 

T. Akasaka, Y. Kobayashi, S. Ando and N. Kobayashi, GaN hexagonal microprisms with smooth vertical facets fabricated by selective metalorganic vapor phase epitaxy , Appl. Pbys. Lett., 71, 2196-2198 (1997). 

Hou, H. Q., B. E. Hammons, and H. C. Chui. Submitted. Doping and in situ selective etching of AlGaAs with CCI4 in metalorganic vapor phase epitaxy. Applied Physics Letters. 

The diffusion of Mg was studied in GaN layers grown onto sapphire substrates by atmospheric-pressure metalorganic vapor-phase-epitaxy in a so-called home-made reactor. Secondary ion mass spectroscopy was used to visualize the Mg profiles in 2 types of multi sub-layer GaN structures. One structure was grown with a variable flow of Ga precursor, and the other with a variable growth temperature. In both cases, the Mg dopant precursor (Cp2Mg) flow was constant. Using Pick s second law to fit... 

J Sollner, M Scholl, A Schneider, M Heuken, J Woitok. Optimization of strained short-period ZnSSe/ZnSe superlattices grown by metalorganic vapor-phase epitaxy. J Crystal Growth 137 35-42, 1994. 

T Yasuda, I Mitsuishi, H Kukimoto. Metalorganic vapor-phase epitaxy of low-resistivity / -type ZnSe. Appl Phys Lett 52 57-59, 1988. 

Elliott et al. started experimental fabrication of PjtN-lype extraction diodes, as well as Pjm" and Pvn" [361, 362]. They used HgCdTe which enabled them to fabricate heterostructures without huilt-in stress. They used metalorganic vapor phase epitaxy (MOVPE) and IMP procedure (fabrication of interdiffusion multilayers). The substrate was GaAs or CdZnTe (4 % Zn), and after deposition the... 

C. Elliott, N. Gordon, R. Hall, T. Phillips, A. White, C. Jones, C. Maxey, N. Metcalfe, Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices. J. Electron. Mat 25(8), 1139-1145 (1996)... 

Amano H., Sawaki N., Akasaki I., Toyoda Y. (1986) Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer Applied Physics Letters Vol. 48, pp 353-355. 

Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,ln)N Films on Lattice-Mismatched Substrates... 

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