GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC

GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC 

Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284-3068, USA 

Currently, the available single crystal GaN substrates are limited by the size and point defects that make them unsuitable for mass production [1]. An alternative to native GAN substrates is to use free-standing GaN templates prepared by hydride vapor phase epitaxy (HVPE), which has a typical thread dislocation (TD) density of 105-106 cm-2, however, the high price limits their availability [2], 

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd 

Unlike conventional ELO method, nanometer-thick SiN layers with a porous morphology can be prepared in situ by simply flowing appropriately diluted silane for a short period on the substrate under the similar growth condition (chamber pressure and temperature, etc.) used for 

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