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Plasma source molecular beam epitaxy

Another method for production of ceria films is by oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE). This method has been reviewed by Chambers.The advantage of the oxygen assisted plasma technique is that for certain films the dissociation of O2 is limiting in the growth of fully oxidized films. By use of a plasma source of oxygen, O atoms and ions are provided to the... [Pg.300]

Kern, R. S., et. al., Solid Solutions of AIN and SiC Grown by Plasma-assisted Gas-Source Molecular Beam Epitaxy, J. Mater. Res., 8(7) 1477-1480 (July 1993)... [Pg.135]

The growth of superconductive oxides under vacuum conditions compatible with MBE requires the use of activated oxygen. The atomic oxygen or ozone appear to be such species [150]. The characteristics of a radiofrequency plasma source for molecular beam epitaxial growth of high-Tc superconductor films (200 A) from DyBa2Co30, on SrTiOj are described and discussed in Ref [150]. [Pg.145]

See other pages where Plasma source molecular beam epitaxy is mentioned: [Pg.41]    [Pg.41]    [Pg.91]    [Pg.220]    [Pg.247]    [Pg.307]    [Pg.52]    [Pg.389]    [Pg.390]    [Pg.477]    [Pg.4]    [Pg.395]    [Pg.309]   


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Beam sources

Epitaxial

Epitaxis

Epitaxy, epitaxial

Molecular beam

Molecular beam epitaxy

Molecular beam sources

Molecular epitaxy

Molecular sources

Plasma sources

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