Epitaxial growth oscillations

SIMS and secondary electron-emission examination revealed that the Cu layers deposited on the c(2 x 2)-O/Ni(100) substrate are always covered by an adsorbed layer of oxygen [2]. AES [3], ICISS [4], work function measurements [5, 6], and STM observations [7, 8] revealed that oxygen atom is always present on the surface of the grown Cu films deposited on an oxygen pre-covered Ru(OOOl) surface. Under certain conditions (6>o = 0.2-0.4 ML, T 400 K), the work function, monitored during film deposition, oscillates with a period of one monolayer of copper epitaxial growth. 

Haeni, J. et al (2000) RHEED intensity oscillations for the stoichiometric growth of SrTiOs thin films by reactive molecular beam epitaxy. 

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