Metal-organic vapor phase epitaxy

Hoglund, L., Petrini, E., Asplund, C. et al. (2006) Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy. Applied Surface Science, 252(15), 5525-29. 

Cyclopentadienyl compounds have been thoroughly investigated as suitable precursors to rare earth doped semiconductors in MOCVD (metal-organic chemical vapor deposition) or MOVPE (metal-organic vapor phase epitaxy) processes [283]. The use of btsa complexes for the same purpose has appeared in the literature very recently [285]. Typical process conditions are shown in Scheme 14. It was found that the carbon contamination of the deposited metal is less in the btsa case. 

Key words Metal organic vapor phase epitaxy (MOVPE), dislocations, electrical activity of dislocations, transmission electron microscopy, electron holography... 

Metal-Organic Vapor-phase Epitaxy (MOVPE)... 

Metal-organic vapor-phase epitaxy the same as MOCVD, but implying specific induced crystalline orientation of the deposited film... 

T.E. Kuech, Metal-Organic Vapor Phase Epitaxy of Compound Semiconductors, Mater. Sci. Rep., Vol.2, 1987, p.l. 

Mixed metal oxides can be addressed as belonging to three main fields, namely superconducting metal oxides (SMOs) (Section V.D.l), transparent conductive oxides (TCOs) (Section V.D.2) and ferroelectric oxides (Section V.D.3). The synthesis procedures for mixed metal oxides include sintering, sol-gel, PLD or laser ablation, sputtering evaporation, MBE, MOVPE (metal-organic vapor-phase epitaxy), OMVPE (organometallic vapor-phase epitaxy) and CVD in particular. 

MOVPE metal-organic vapor-phase epitaxy... 

The methods available for preparation of the different layers in thin-film solar cells include physical methods such as vacuum sputtering, vapor-phase deposition, and molecular beam epitaxy as well as chemical methods such as chemical vapor-phase deposition, metal organic vapor-phase epitaxy, chemical bath deposition (CBD), and electrochemical deposition (ED). This chapter explores the potential of electrodeposition as a route to the fabrication of absorber layers such as CdTe, CIGS, and CZTS for thin-film solar cells. Electrochemistry may also be usefiil for the preparation of transparent layers such as ZnO this topic has been reviewed by Pauporte and lincot [13]. 

Two surfaces are conditioned the aforementioned InP(lll) A-face with In atoms protruding a quarter of a monolayer and the In-rich InP(lOO) (2x4) reconstructed surface of a thin homoepitaxial layer, prepared by metal organic vapor-phase epitaxy (MOVPE) on a crystalline InP wafer substrate [241], Whereas the former surface has been successfully conditioned for the development of an efficient and stable photovoltaic photoelectrochemical solar cell (see Section 2.5.2), the latter surface has been employed in the development of an efficient photoelec-trocatalytic structure for light-induced hydrogen generation (see Section 2.6.2). 

InP (111) B by Selective Area Metal-organic Vapor Phase Epitaxial Growth for Two-dimensional Photonic Crystal Application, 14(10), 1071-1074. 

Merckling, C., et al., 2014. Heteroepitaxy of InP on Si(OOl) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches the role of the nucleation layer and the recess engineering. J. Appl. Phys. 115, 023710. 

Due to their high density of small pores, PS layers are considered to be a flexible material which may avoid the use of an intermediate epitaxial buffer layer. Hence, PS substrate has been studied as a candidate for the growth of GaN films by metal organic vapor phase epitaxy (MOVPE). It is expected a relaxation of stress and the reduction of defect density of the GaN films, caused by the large misfit between GaN layers and Si substrate, by straining small crystalline columns in PS layers... 

Electrodeposition of semiconductors is a low-cost process. The most expensive equipment used in the process is a computerized potentiostat which may cost up to 5,000 compared to techniques like molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE) in which the cost of the machines is in the order of 1 million. In addition, electrodeposition is versatile in application in the sense that many semiconductor materials can be electrodeposited using the same equipment. The only change required is basically the replacement of the deposition electrolyte by the desired one at any time. Evidence of a variety of electrodeposited semiconductors includes CdTe [32-42], CdS [10,32], ZnSe [11], ZnTe [12-14], SnS [17], CuInSea [18-22], CuInGaSe2 [23-27], and nitrides [9,43]. 

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