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Chemical vapor deposition, modeling epitaxial growth

Oh, L Takoukis, C.G. Neudeck, G.W. Mathematical modeling of epitaxial silicon growth in pancake chemical vapor deposition reactors. J. Electrochem. Soc. 1991, B8, 554-567. [Pg.448]

See other pages where Chemical vapor deposition, modeling epitaxial growth is mentioned: [Pg.155]    [Pg.168]    [Pg.170]    [Pg.205]    [Pg.2]    [Pg.122]    [Pg.101]    [Pg.399]    [Pg.402]    [Pg.252]   
See also in sourсe #XX -- [ Pg.202 ]



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