Epitaxial germanium

Hydrick, J.M., et al., 2008. Chemical mechanical polishing of epitaxial germanium on Si02-pattemed Si(OOl) substrates. ECS Trans. 16 (10), 237—248. 

Germane is used primarily to produce high purity germanium metal or epitaxial deposits of germanium on substrates for electronics by thermal decomposition at about 350°C (see Germaniumand germanium compounds). 

Arsenic from the decomposition of high purity arsine gas may be used to produce epitaxial layers of III—V compounds, such as Tn As, GaAs, AlAs, etc, and as an n-ty e dopant in the production of germanium and silicon semiconductor devices. A group of low melting glasses based on the use of high purity arsenic (24—27) were developed for semiconductor and infrared appHcations. 

Fig. 13.6. Germanium quantum dots grown epitaxially on a silicon substrate (a) AFM (b) UFM 400 nm x 400 nm the lines indicate the location of the scans shown under each picture, with the arrows corresponding to the positions of the crossbars (Kolosov ef al. 1998).

Epitaxial films frequently have superior characteristics than either polycrystalline or amorphous films. The epitaxial growth concerns a large number of materials silicon, silicon-germanium alloys, III-V compounds, binary and ternary composites, metals, etc. 

EINECS 231-961-6 Germane Germanium hydride Germanium tetrahydride Monogermane UN2192. A flammable, toxic, colorless gas used for the deposition of epitaxial and amorphous silicon -germanium alloys. Gas mp = -165 bp = -88 d = 2.600 LDso (mus orl) B1250 mg/kg. 

The formation of tetragonal-Ge02 appears to be desirable for chemical stability and reduction of interface strain deformation. The tetragonal phase can grow epitaxially on the (110) plane of germanium and therefore is a promising candidate for MOS structures, but conditions for its formation are not well defined. 

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