Epitaxy phase

X-ray Diffraction (XRD) is a powerful technique used to uniquely identify the crystalline phases present in materials and to measure the structural properties (strain state, grain size, epitaxy, phase composition, preferred orientation, and defect structure) of these phases. XRD is also used to determine the thickness of thin films and multilayers, and atomic arrangements in amorphous materials (including polymers) and at inter ces. 

Park I, Lee B et al (2005) Epitaxial phase transition of polystyrene-b-polyisoprene from hexagonally perforated layer to gyroid phase in thin film. Macromolecules 38 10532-10536... 

S.N. Che, S. Kamiya, O. Terasaki, and T. Tatsumi, The Formation of Cubic Pm3n Mesostructure by an Epitaxial Phase Transformation from Hexagonal p6mm Mesophase. J. Am. Chem. Soc., 2001, 123, 12089-12090. 

The simplified analysis outlined above pertains directly to the epitaxial phase diagram of Dy in fig. 7. It suggests that the effect of clamping is not in fact negligible. 

The RE-silicon interface is reactive, with formation of a RE-rich silicide. Annealing facilitates the ordering and formation of an epitaxial Si-rich silicide layer. In the case of epitaxial phases on Si(lll), a s/i x V3)R30 superstructure is frequently observed, which is attributed to the ordering of Si vacancies in the bulk. The top layer of the silicide is a buckled layer of Si atoms similar to the Si(lll)-(1 x 1) surface, as identified for YSij 7 [92]. Similar (VI x V3)R30 superstructures have been observed for several other trivalent RE silicides [93-96]. 

The oriented overgrowth of a crystalline phase on the surface of a substrate that is also crystalline is called epitaxial growth [104]. Usually it is required that the lattices of the two crystalline phases match, and it can be a rather complicated process [105]. Some new applications enlist amorphous substrates or grow new phases on a surface with a rather poor lattice match. 

Stringfellow G B 1989 Organometallic Vapor-Phase Epitaxy (San Diego, CA Academic)... 

LPE = liquid-phase epitaxy, MOCVD = metalorganic chemical vapor deposition, VPE = vapor-phase epitaxy. 

Fig. 13. Furnace reactor for the growth of HgCdTe films on CdZnTe substrates usiag the Hquid-phase epitaxial process. The melt is tellurium ia a quartz...

Fig. 14. Phase diagrams of HgCdTe used to defiae the Hquid-phase epitaxial growth process where composition is ia mole fractioa, X, and the numbers represent temperatures ia °C (a) Te-rich corner where the dotted Haes A—F correspoad to values of of 0.1, 0.2, 0.3, 0.5, 0.8, and 0.9, respectively, and (b) Hg-rich corner where A—F correspond to values of X of 0.9, 0.8, 0.6, 0.4, 0.2, and 0.1, respectively.

Metalorganic Vapor Phase Epitaxy 1992," ia the Proceedings of the Sixth International Conference on Metalorganic Papor Phase Epitayy, Cambridge, Mass., June 1992 8—11, G. B. StriugfeUow and. J. Coleman, eds.,/ CystalGrowth, 124(1—4) (Nov. 1992). 

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