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Epitaxial chemical compatibility

Certain semiconductor device fabrication methods require the formation of a single-crystal deposit of the semiconductor on an insulating substrate. In epitaxial methods, the semiconductor is deposited on a single-crystal piece of substrate chosen, in part, on the basis of the match of the lattice parameters, thermal expansion coefficients and chemical compatibility of the substrate and deposit. Singlecrystal substrates include those of AI2O3, MgAl2 04, a-quartz and ZrSi04.i ... [Pg.3446]


See other pages where Epitaxial chemical compatibility is mentioned: [Pg.51]    [Pg.34]    [Pg.139]    [Pg.356]    [Pg.97]    [Pg.45]    [Pg.159]    [Pg.144]    [Pg.98]    [Pg.224]   
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