Transmission electron microscopy epitaxial growth

Thin epitaxial films (less than 3 nm) of CrAs and CrSb with zinc-blende structure can be grown on GaAs substrates by MBE. Their 7c exceeds 400 K (Akinaga et al. 2000c Zhao et al. 2001b). A zinc-blende structure is confirmed by in-situ RHEED collected during the growth and ex-situ cross-sectional transmission electron microscopy (TEM). The... 

S. Jin, H. Bender, L. Stalmans, R. Bilyalov, J. Poortmans, R. Loo, M. Caymax, Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon,/. Cryst. Growth, 212, 119-127 (2000). 

P Ruppert, D Hommel, T Behr, H Heinke, A Waag, G Landwehr. Molecular-beam epitaxial-growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron-diffraction, transmission electron-microscopy and x-ray-diffraction. J Crystal Growth 138 48-54, 1994. 

Transmission electron microscopy, electron diffraction, and Raman spectroscopy indicated that the (001) growth sector has less defects, whereas the (111) sector shows many stacking faults and twins. Epitaxy on the ((X)l) surface of diamond was the first choice in searching for electronic quality films. 

Figure 7.26 A transmission electron microscopy lattice image of a growth microtwin in an InSb epitaxial layer. The mirror (twin) planes are marked and one set of lattice fringes are highlighted to emphasize the mirror reflection.

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