Vapor phase epitaxy growth

Amano, H. Sawaki, N. Akasaki, I. Toyoda, Y. 1986. Metalorganic vapor phase epitaxial growth of a high quahty GaN film using AIN buffer layer. Appl. Phys. Lett. 48 353-355. 

R. J. Molmr, Hydride Vapor Phase Epitaxial Growth of TTI-V Nitrides T. D. Moustakas, Growth of III-V Nitrides by Molecular Beam Epitaxy Z. Liliental-Weber, Defects in Bulk GaN and Homoepitaxial Layers C G. Van tie Walk and N. M. Johnson, Hydrogen in III-V Nitrides... 

G. B. Stringfellow, Organometallic Vapor-Phase Epitaxial Growth of III-V Semiconductors... 

Park, W. I., Kim, D. H., Jung, S. W., and Yi, G. C. (2002). Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods. Appl. Phys. Lett. 80 4232-4234. 

J.E. Spanier, G.T. Dunne, L.B. Rowland, and I.P. Herman, Vapor-phase epitaxial growth on porous 6H-SiC analyzed by Raman scattering, Appl. Phys. Lett., 76, 3879-3881 (2000). 

All vapor phase epitaxial growth processes involve the interaction of the vapor with the surface of the solid phase, thereby demanding the inclusion of heterogeneous kinetics into the overall rate discussion. The typical description of surfaces is a model based on the hypothesis that surfaces are composed of a fixed number of sites on which... 

InP (111) B by Selective Area Metal-organic Vapor Phase Epitaxial Growth for Two-dimensional Photonic Crystal Application, 14(10), 1071-1074. 

FIGURE 11 Schematic diagram of a vapor phase epitaxial growth system. 

Amano H., Sawaki N., Akasaki I., Toyoda Y. (1986) Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer Applied Physics Letters Vol. 48, pp 353-355. 

Molnar, R.J. (1999) Hydride vapor phase epitaxial growth of 111-V nitrides, in Wflliaidson, R., et al.. Semiconductors and Semimetals,... 

Metalorganic Vapor Phase Epitaxial Growth of Nonpolar Al(Ga,ln)N Films on Lattice-Mismatched Substrates... 

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