Reactive deposition epitaxy

Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy (RDE) of 0.6 nm Cr at 500, 550 and 600 C. The NCs were covered by epitaxial silicon at 700 °C with different thickness. It was observed that CrSi2 is localized nearthe surface in the form of 20 nm 2D nanoislands and 40-80 nm 3D NCs. The 2D nanoisland concentration is found to be reduced by the Si cap growth, while the large 3D NCs appear at the depth of Cr deposition and they also appear at the surface. 

It was shown that chromium disilicide (CrSi2, Eg= 0.35 eV) nanociystallites are embedded in monocrystalline lattice by reactive deposition epitaxy (RDE of Cr) and Si molecular beam epitaxy (MBE) [1]. Redistribution of CrSi2 NCs has been observed in silicon-silicide-silicon heterostructures with one embedded layer by HR XTEM data [2]. 

AJ Learn, KE Haq. Low temperature epitaxy of P-SiC by reactive deposition. Appl Phys Lett 17 26,1970 S Misawa, S Yoshida, S Gonda. Epitaxial growth of SiC thin films by reactive evaporation. Shinku 25 727, 1982. 

Thin films of carbides and nitrides of Group 6 metals were synthesized by reaction of a metal film with a reactive gas at high temperature and by reactive sputtering. The phases obtained depended on the experimental conditions. High temperatures metastable phases (/i-WC, v and 6-MoC]. ) were obtained by reactive sputter deposition of films. The carbon concentration in such films depended on the temperature of the substrate and on the pressure. In some cases ordered sublattices of carbon and nitrogen were observed and epitaxial relationships between the deposit and the substrate were studied. 

Chemical vapor deposition (CVD) finds its primary use in semiconductors and insulators, especially where epitaxial growth is required. (Epitaxy is the growth of a single-crystal film with a fixed orientation with respect to the crystal structure of the underlying substrate.) It employs reactive gas-phase precursors that decompose over the hot substrate, leaving solid behind. Fig. 6 shows an example of a tool commonly used for epitaxial deposition. Because of the surface reactions involved, films can sometimes be grown selectively on some... 

In a recent study, we have investigated the reactivity of gold nanoparticles prepared by UHV-deposition on in situ cleaved MgO surfaces [83,84]. Particles grown at 200° C or higher were in epitaxy on the MgO surface and presented truncated octahedron shapes, which is the equilibrium shape [85]. The profile of such a particle observed by HRTEM is presented in Fig. 3.18. The aspect ratio is 0.6. 

The significant vapor pressure of compound 26 allowed rapid mass transport of the precursor at 22 °G and the facile decomposition pathway resulted in film growth at temperatures as low as 200 °G. Epitaxial GaN films were deposited from 26 at 650 °G via LPGVD. " The growth rate of the GaN films deposited was 800 A min Despite these excellent growth properties, the high reactivity of 26 necessitates careful manipulation of the neat product, as a vigorous exothermic decomposition can result. 

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