Organometallic chemical vapor phase epitaxy

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... 

Figure 1. Schematic diagram of transport phenomena and chemical reactions underlying organometallic vapor-phase epitaxy.

The potential benefits of CVD over other film deposition techniques are that CVD-derived films can be deposited under conditions that give conformal coverage, they can be deposited at low temperatures, there can be a high level of compositional control, thin layers can be deposited, the technique can be scaled to coat large areas uniformly, and there is also the possibility for area-selective deposition13 as a result of the chemical nature of this process. The details of CVD and related chemical deposition processes such as atomic layer epitaxy (ALE), organometallic vapor-phase epitaxy (OMVPE), and others have been described elsewhere.6... 

A method that overcomes some of these limitations is metal-organic chemical vapor deposition (MOCVD), sometimes called organometallic vapor phase epitaxy (OMVPE) °. An organometallic compound such as a group IIB alkyl reacts with a chalcogenide hydride on a substrate that is at the highest temperature in the chamber ... 

Chemical beam epitaxy a process in which one or more beams of volatile metal-organic precursors is directed to the substrate surface to effect film growth Chemical vapor deposition (CVD also termed vapor phase epitaxy) the deposition of a thin film of an element or compound using some form of excitation for the decomposition of a volatile precursor Laser-assisted chemical vapor deposition a CVD in which the excitation is delivered from photons delivered from a laser Metal-organic chemical vapor deposition (MOCVD) the same as CVD, except that the precursor is a volatile organometallic or coordination compound with carbon-containing ligands... 

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