Chemical molecular beam epitaxy

Atomic and Molecular Collisions Coherent Control of Chemical Reactions Energy Transfer, Intramolecular Ion Kinetics and Energetics Kinetics, Chemical Molecular Beam Epitaxy, Semiconductors... 

In practical applications, gas-surface etching reactions are carried out in plasma reactors over the approximate pressure range 10 -1 Torr, and deposition reactions are carried out by molecular beam epitaxy (MBE) in ultrahigh vacuum (UHV below 10 Torr) or by chemical vapour deposition (CVD) in the approximate range 10 -10 Torr. These applied processes can be quite complex, and key individual reaction rate constants are needed as input for modelling and simulation studies—and ultimately for optimization—of the overall processes. 

Silicon Epitaxy. A critical step ia IC fabricatioa is the epitaxial depositioa of sdicoa oa an iategrated circuit. Epitaxy is defined as a process whereby a thin crystalline film is grown on a crystalline substrate. Silicon epitaxy is used ia bipolar ICs to create a high resistivity layer oa a low resistivity substrate. Most epitaxial depositioas are doae either by chemical vapor depositioa (CVD) or by molecular beam epitaxy (MBE) (see Thin films). CVD is the mainstream process. 

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Physics and chemistry researchers approach III—V synthesis and epitaxial growth, ie, growth in perfect registry with the atoms of an underlying crystal, differently. The physics approach, known as molecular beam epitaxy (MBE), is essentially the evaporation (14—16) of the elements, as illustrated in Figure 4. The chemistry approach, organometaUic chemical vapor deposition (OMCVD) (17) is exemplified by the typical chemical reaction ... 

Chemical vapor deposition may be defined as the deposition of a solid on a heated surface from a chemical reaction in the vapor phase. It belongs to the class of vapor-transfer processes which is atomistic in nature, that is the deposition species are atoms or molecules or a combination ofthese. Beside CVD, they include various physical-vapor-deposition processes (PVD) such as evaporation, sputtering, molecular-beam epitaxy, and ion plating. 

Chemical Vapor Deposition Electrochemical Deposition Molecular Beam Epitaxy Atomic Layer Deposition Thermal Oxidation Spin Coating... 

Two popular means of growing silicon single crystals are molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) se a beam... 

Quantum dots are the engineered counterparts to inorganic materials such as groups IV, III-V and II-VI semiconductors. These structures are prepared by complex techniques such as molecular beam epitaxy (MBE), lithography or self-assembly, much more complex than the conventional chemical synthesis. Quantum dots are usually termed artificial atoms (OD) with dimensions larger than 20-30 nm, limited by the preparation techniques. Quantum confinement, single electron transport. Coulomb blockade and related quantum effects are revealed with these OD structures (Smith, 1996). 2D arrays of such OD artificial atoms can be achieved leading to artificial periodic structures. 

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