Reflection high energy electron diffraction, molecular beam epitaxy

Fig. 4. Schematic of an ultrahigh vacuum molecular beam epitaxy (MBE) growth chamber, showing the source ovens from which the Group 111—V elements are evaporated the shutters corresponding to the required elements, such as that ia front of Source 1, which control the composition of the grown layer an electron gun which produces a beam for reflection high energy electron diffraction (rheed) and monitors the crystal stmcture of the growing layer and the substrate holder which rotates to provide more uniformity ia the deposited film. After Ref. 14, see text.

S. Clake, D. D. Vvedensky. Origin of reflection high-energy electron-diffraction intensity oscillations during molecular-beam epitaxy a computational modeling approach. Phys Rev Lett 55 2235, 1987. 

P Ruppert, D Hommel, T Behr, H Heinke, A Waag, G Landwehr. Molecular-beam epitaxial-growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron-diffraction, transmission electron-microscopy and x-ray-diffraction. J Crystal Growth 138 48-54, 1994. 

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