Epitaxy methods

Certain semiconductor device fabrication methods require the formation of a single-crystal deposit of the semiconductor on an insulating substrate. In epitaxial methods, the semiconductor is deposited on a single-crystal piece of substrate chosen, in part, on the basis of the match of the lattice parameters, thermal expansion coefficients and chemical compatibihty of the substrate and deposit. Singlecrystal substrates include those of AI2O3, MgAl204, Q -quartz andZrSi04. ... 

Growing of the epitaxial Er doped Si layers was performed by sublimation molecular-beam epitaxy method. Layers with Ge quantum dots were also grown by sublimation molecular-beam epitaxy method in GeH4. 

Peng and coworkers [833] have adapted the successive ion layer adsorption and reaction (SILAR), an in-solution deposition method derived from the atomic layer epitaxy method used in growing thin films in vacuum, to prepare CdSe-CdS nanocrystals on gram scale batches using ordinary precursors such as CdO, S, and Se. Wei et al. [228] report a green synthetic route for CdSe/CdS core-shell nanoparticles in aqueous solution using Se powder as the selenium... 

For homoepitaxy on the porous Si layers, the usual Si epitaxy methods are applied. Most research has been reported on the usage of atmospheric pressure chemical vapor deposition (APCVD). But... 

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