Metal-organic vapor phase epitaxy MOVPE

Key words Metal organic vapor phase epitaxy (MOVPE), dislocations, electrical activity of dislocations, transmission electron microscopy, electron holography... 

Metal-Organic Vapor-phase Epitaxy (MOVPE)... 

Two surfaces are conditioned the aforementioned InP(lll) A-face with In atoms protruding a quarter of a monolayer and the In-rich InP(lOO) (2x4) reconstructed surface of a thin homoepitaxial layer, prepared by metal organic vapor-phase epitaxy (MOVPE) on a crystalline InP wafer substrate [241], Whereas the former surface has been successfully conditioned for the development of an efficient and stable photovoltaic photoelectrochemical solar cell (see Section 2.5.2), the latter surface has been employed in the development of an efficient photoelec-trocatalytic structure for light-induced hydrogen generation (see Section 2.6.2). 

Due to their high density of small pores, PS layers are considered to be a flexible material which may avoid the use of an intermediate epitaxial buffer layer. Hence, PS substrate has been studied as a candidate for the growth of GaN films by metal organic vapor phase epitaxy (MOVPE). It is expected a relaxation of stress and the reduction of defect density of the GaN films, caused by the large misfit between GaN layers and Si substrate, by straining small crystalline columns in PS layers... 

Electrodeposition of semiconductors is a low-cost process. The most expensive equipment used in the process is a computerized potentiostat which may cost up to 5,000 compared to techniques like molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE) in which the cost of the machines is in the order of 1 million. In addition, electrodeposition is versatile in application in the sense that many semiconductor materials can be electrodeposited using the same equipment. The only change required is basically the replacement of the deposition electrolyte by the desired one at any time. Evidence of a variety of electrodeposited semiconductors includes CdTe [32-42], CdS [10,32], ZnSe [11], ZnTe [12-14], SnS [17], CuInSea [18-22], CuInGaSe2 [23-27], and nitrides [9,43]. 

C.T. Elliott, N.T. Gordon, R. Hall, T. Phillips, C. Jones, B. Matthews, C. Maxey, et al.. Metal organic vapor phase epitaxy (MOVPE) grown heterojunction diodes in Hgi- Cd Te. in SPIE s 1994 International Symposium on Optics, Imaging, and Instrumentation, (1994), pp. 648-657... 

A-plane GaN films with different thickness between 1 [im and 67 [im were grown on r-plane sapphire by metal-organic vapor phase epitaxy (MOVPE) and HVPE. The a-plane MOVPE films were grown at University of Stuttgart and University of Bremen at 1030-1050 °G using a conventional two-step process employing GaN or AlN buffer layers [45, 46]. The a-plane HVPE films were grown at University of California, Santa Barbara, directly on sapphire in a three-zone horizon reactor at 1040-1070 °C [47]. 

Although first deposition experiments of nonpolar GaN films on r-plane sapphire were performed as early as in 1987 [5], the defect structure in wurtzite GaN and related compounds has been mainly studied in the past focusing on films oriented along the hexagonal [0001] axis (c-axis). Growth techniques such as molecular beam epitaxy (MBE) [1], metal organic vapor phase epitaxy (MOVPE) [6], and hydride vapor phase epitaxy (HVPE) [7,8] are established for polar as well as nonpolar GaN growth. The structural quality of a-plane GaN... 

The detector arrays are processed on 2 in. or 3 in. diameter PACE-I material. The PACE-I material fabrication process has been described extensively elsewhere (Gertner et al. 1983). In summary, metal-organic vapor phase epitaxy (MOVPE) CdTe is deposited onto properly polished sapphire. 

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