Compound semiconductors and

CVD gaseous reactants (precursors) delivered to a heated substrate in a flow reactor undergo tliennal reaction to deposit solid films at atmospheric or reduced pressure, and volatile side products are pumped away. CVD is used for conductors, insulators and dielectrics, elemental semiconductors and compound semiconductors and is a workliorse in tire silicon microelectronics industry. 

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

The greatest potential appHcation for single-electron devices Hes in digital circuits. However, a number of other appHcations exist, including current standards and ultrasensitive electrometers (70,71). SETs are not unique to compound semiconductors, and in fact a great deal of work has been carried out in other material systems, including Al—AlO —A1 tunnel junctions. A review of single-electron phenomena is available (72). 

Growth of Compound Semiconductors and Superlattices by Organometallic Chemical Vapor Deposition... 

Lanthanide nitridoborates can be divided into three classes salt-like compounds, semiconductors, and conductors or superconductors, as already shown in Fig. 8.7. Salt-like structures are usually transparent materials, marked by the typical color of the lanthanide ion. Here we discuss only nitridoborate compounds of lanthanum. The compounds La3(B3N, ) [27], La5(B3N, )(BN3) [28], Lag(B3N6)(BN3)N [29], and La3(BN3)N all count as salt-like materials, with La, ... 

In theory, the III-V compound semiconductors and their alloys are made from a one to one proportion of elements of the III and V columns of the periodic table. Most of them crystallize in the sphalerite (zinc-blende ZnS) structure. This structure is very similar to that of diamond but in the III-V compounds, the two cfc sublattices are different the anion sublattice contains the group V atoms and the cation sublattice the group III atoms. An excess of one of the constituents in the melt or in the growing atmosphere can induce excess atoms of one type (group V for instance) to occupy sites of the opposite sublattice (cation sublattice). Such atoms are said to be in an antisite configuration. Other possibilities related with deviations from stoichiometry are the existence of vacancies (absence of atoms on atomic sites) on the sublattice of the less abundant constituent and/or of interstitial atoms of the most abundant one. 

Volume 26 III-V Compound Semiconductors and Semiconductor Properties of Superionic Materials... 

This process has the advantage of low-temperature deposition, which may be needed for the growth of thin films on temperature-sensitive substrates such as compound semiconductors and polymers. If a laser is used as the light source, fine lines of materials can be written directly, and possibly, lithographic steps can be avoided and damaged lines can be repaired. 

It is possible to prepare thin foils from hard materials by mechanical methods alone. This is especially useful for modern nonmetallic electronic materials such as compound semiconductors and multication oxides. These materials are not easily polished chemically, and ion beams can cause unequal... 

Many specific methods have been reported for the preparation of quantum dots of compound semiconductors and include ... 

The (110) surface of the zincblende structure compound semiconductors and the ( lOllO) surface of the wurtzite structure compound semiconductors... 

---