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Organometallic vapor phase epitaxy

Stringfellow G B 1989 Organometallic Vapor-Phase Epitaxy (San Diego, CA Academic)... [Pg.954]

Gandhi, S., and Bhat, I., Organometallic Vapor Phase Epitaxy Features, Problems New Approaches, MRS Bulletin, pp. 39-43 (Nov. 1988)... [Pg.343]

Stringfellow, G. B. Organometallic Vapor Phase Epitaxy Theory and Practice-, Academic Press San Diego, 1989. [Pg.149]

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... [Pg.239]

Neutralization of zinc acceptors in InP by hydrogen occurs also in nonintentionally hydrogenated materials grown by organometallic vapor phase epitaxy (Antell et al., 1988 Cole et al., 1988). Levels of hydrogen comparable to the zinc concentration have been detected by SIMS experi ... [Pg.477]

Stringfellow GB (2001) Fundamental aspects of organometallic vapor phase epitaxy. Materials Science and Engineering B-Solid State Materials for Advanced Technology 87(2), 97-116... [Pg.227]

B. Monitoring of Organometallic Vapor Phase Epitaxy by Mass... [Pg.163]

G. B. Stringfellow, Organometallic Vapor-Phase Epitaxial Growth of III-V Semiconductors... [Pg.184]

Figure 1. Schematic diagram of transport phenomena and chemical reactions underlying organometallic vapor-phase epitaxy. Figure 1. Schematic diagram of transport phenomena and chemical reactions underlying organometallic vapor-phase epitaxy.
The potential benefits of CVD over other film deposition techniques are that CVD-derived films can be deposited under conditions that give conformal coverage, they can be deposited at low temperatures, there can be a high level of compositional control, thin layers can be deposited, the technique can be scaled to coat large areas uniformly, and there is also the possibility for area-selective deposition13 as a result of the chemical nature of this process. The details of CVD and related chemical deposition processes such as atomic layer epitaxy (ALE), organometallic vapor-phase epitaxy (OMVPE), and others have been described elsewhere.6... [Pg.217]

We found recently(8) that organic ditellurides (RTeTeR, R=some organic moiety) are potentially useful tellurium source compounds for the preparation of Te-containing II-VI compounds by organometallic vapor phase epitaxy (OMVPE). In the course of those investigations we found (9) that di(aryltellurato) mercury compounds [(RTe)2Hg], formed from the ditelluride and Hg,... [Pg.188]

Mixed metal oxides can be addressed as belonging to three main fields, namely superconducting metal oxides (SMOs) (Section V.D.l), transparent conductive oxides (TCOs) (Section V.D.2) and ferroelectric oxides (Section V.D.3). The synthesis procedures for mixed metal oxides include sintering, sol-gel, PLD or laser ablation, sputtering evaporation, MBE, MOVPE (metal-organic vapor-phase epitaxy), OMVPE (organometallic vapor-phase epitaxy) and CVD in particular. [Pg.1001]


See other pages where Organometallic vapor phase epitaxy is mentioned: [Pg.107]    [Pg.737]    [Pg.737]    [Pg.266]    [Pg.231]    [Pg.651]    [Pg.656]    [Pg.295]    [Pg.306]    [Pg.213]    [Pg.636]    [Pg.426]    [Pg.371]    [Pg.398]    [Pg.398]    [Pg.191]    [Pg.3]    [Pg.22]    [Pg.351]    [Pg.1043]   
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See also in sourсe #XX -- [ Pg.77 ]




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Epitaxial

Epitaxis

Epitaxy phase

Epitaxy vapor-phase

Epitaxy, epitaxial

Organometallic Vapor Phase Epitaxy (OMVPE) System Technology

Organometallic chemical vapor phase epitaxy

Organometallic vapor phase epitaxy OMVPE)

Organometallic vapor-phase epitaxy growth precursors

Semiconductors, organometallic vapor phase epitaxy

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